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IRF7406TRPBF
- Manufacturer’s Part#:IRF7406TRPBF
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:HEXFET®
- ECAD Model:
- Description:MOSFET P-CH 30V 5.8A 8-SOIC
- Datasheet:
- Quantity:Buy NowAdd to Cart
- Payment:
- Delivery:
- In Stock: 600
- Available: 178704
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $2.52120 | US $2.52 |
10+ | US $1.68080 | US $16.81 |
30+ | US $1.26060 | US $37.82 |
100+ | US $1.00848 | US $100.85 |
500+ | US $0.92444 | US $462.22 |
1000+ | US $0.84040 | US $840.40 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part #IRF7406TRPBF
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesHEXFET®
- ECCNEAR99
- MountSurface Mount
- Width3.9878mm
- Height1.75mm
- Length4.9784mm
- FET TypeP-Channel
- Lead FreeLead Free
- PackagingTape & Reel (TR)
- Published2004
- Rise Time33ns
- Vgs (Max)±20V
- Resistance45mOhm
- TechnologyMOSFET (Metal Oxide)
- Nominal Vgs-1 V
- Part StatusActive
- Row Spacing6.3 mm
- REACH StatusREACH Unaffected
- Mounting TypeSurface Mount
- Recovery Time63 ns
- Terminal FormGULL WING
- Current Rating-5.8A
- Number of Pins8
- Operating ModeENHANCEMENT MODE
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Contact PlatingTin
- Fall Time (Typ)47 ns
- Factory Lead Time12 Weeks
- Power Dissipation2.5W
- Terminal PositionDUAL
- Threshold Voltage-1V
- Additional FeatureULTRA LOW RESISTANCE
- Number of Channels1
- Number of Elements1
- Turn On Delay Time16 ns
- Vgs(th) (Max) @ Id1V @ 250μA
- Voltage - Rated DC-30V
- Dual Supply Voltage-30V
- Radiation HardeningNo
- Turn-Off Delay Time45 ns
- Element ConfigurationSingle
- Operating Temperature-55°C~150°C TJ
- Power Dissipation-Max2.5W Ta
- Number of Terminations8
- Rds On (Max) @ Id, Vgs45m Ω @ 2.8A, 10V
- Transistor ApplicationSWITCHING
- Reflow Temperature-Max (s)30
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs59nC @ 10V
- Gate to Source Voltage (Vgs)20V
- Continuous Drain Current (ID)-5.8A
- Max Junction Temperature (Tj)150°C
- Peak Reflow Temperature (Cel)260
- Drain to Source Voltage (Vdss)30V
- Pulsed Drain Current-Max (IDM)23A
- Drain to Source Breakdown Voltage-30V
- Input Capacitance (Ciss) (Max) @ Vds1100pF @ 25V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Current - Continuous Drain (Id) @ 25°C5.8A Ta
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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