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IRF7413GTRPBF

  • Available: 3863

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $0.00000US $0.00

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Product Parameter

  • Manufacturer
    Infineon Technologies
  • Manufacturer's Part No.
    IRF7413GTRPBF
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Single
  • Series
    HEXFET®
  • ECCN
    EAR99
  • Mount
    Surface Mount
  • Width
    3.9878mm
  • Height
    1.4986mm
  • Length
    4.9784mm
  • FET Type
    N-Channel
  • Packaging
    Tape & Reel (TR)
  • Published
    2009
  • Rise Time
    50ns
  • Vgs (Max)
    ±20V
  • Rds On Max
    11 mΩ
  • Technology
    MOSFET (Metal Oxide)
  • Part Status
    Obsolete
  • REACH Status
    REACH Unaffected
  • Mounting Type
    Surface Mount
  • Number of Pins
    8
  • Package / Case
    8-SOIC (0.154, 3.90mm Width)
  • Fall Time (Typ)
    46 ns
  • Input Capacitance
    1.8nF
  • Power Dissipation
    2.5W
  • Turn On Delay Time
    8.6 ns
  • Vgs(th) (Max) @ Id
    3V @ 250μA
  • Radiation Hardening
    No
  • Turn-Off Delay Time
    52 ns
  • Element Configuration
    Single
  • Operating Temperature
    -55°C~150°C TJ
  • Power Dissipation-Max
    2.5W Ta
  • Rds On (Max) @ Id, Vgs
    11mOhm @ 7.3A, 10V
  • Supplier Device Package
    8-SO
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -55°C
  • Drain to Source Resistance
    11mOhm
  • Gate Charge (Qg) (Max) @ Vgs
    79nC @ 10V
  • Gate to Source Voltage (Vgs)
    20V
  • Continuous Drain Current (ID)
    13A
  • Drain to Source Voltage (Vdss)
    30V
  • Drain to Source Breakdown Voltage
    30V
  • Input Capacitance (Ciss) (Max) @ Vds
    1800pF @ 25V
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Current - Continuous Drain (Id) @ 25°C
    13A Ta

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • RoHS Status
    RoHS Compliant
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

SHIPPING GUIDE

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  • Delivery Time

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