IRF7413ZPBF

The IRF7413ZPBF is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Infineon Technologies. This device is designed for a variety of applications, including power management, motor control, and switching applications, where efficient power handling and thermal performance are critical.

Key Features:

1. Type: N-channel MOSFET
2. Package: The IRF7413ZPBF is typically housed in a TO-220 package, which provides excellent thermal performance and allows for easy mounting on heat sinks.
3. Voltage Rating: The device has a maximum drain-source voltage (V_DS) rating of 55V, making it suitable for applications that require moderate voltage handling.
4. Current Rating: It can handle a continuous drain current (I_D) of up to 50A, depending on the thermal conditions and the heat dissipation capabilities of the system.
5. R_DS(on): The on-resistance (R_DS(on)) is low, typically around 0.025 ohms at a gate-source voltage (V_GS) of 10V. This low on-resistance contributes to reduced power losses during operation, enhancing overall efficiency.
6. Gate Threshold Voltage (V_GS(th)): The gate threshold voltage is in the range of 2V to 4V, which allows for easy drive with standard logic levels.
7. Switching Speed: The IRF7413ZPBF features fast switching capabilities, making it suitable for high-frequency applications.
8. Thermal Resistance: The thermal resistance from junction to case (RθJC) is low, which helps in maintaining lower junction temperatures during operation, thus improving reliability and longevity.

Applications:

• Power Supply Circuits: Used in DC-DC converters and power management systems.
• Motor Control: Suitable for driving motors in various applications, including robotics and industrial automation.
• Switching Applications: Ideal for use in high-speed switching applications where efficiency is paramount.

Electrical Characteristics:

• Maximum Gate-Source Voltage (V_GS): ±20V
• Maximum Pulsed Drain Current (I_D, pulsed): Up to 100A
• Body Diode Characteristics: The IRF7413ZPBF includes an intrinsic body diode, which allows for reverse conduction and can be beneficial in certain applications.

Reliability and Compliance:

The IRF7413ZPBF is designed to meet stringent reliability standards and is compliant with RoHS (Restriction of Hazardous Substances) regulations, making it an environmentally friendly choice for modern electronic designs.

Conclusion:

The IRF7413ZPBF from Infineon Technologies is a robust and efficient N-channel MOSFET that offers excellent performance for a wide range of applications. Its combination of high current handling, low on-resistance, and fast switching capabilities makes it a preferred choice for engineers looking to optimize power efficiency in their designs.