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IRF7416TRPBF

  • In Stock: 23000
  • Available: 205934

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $0.54774US $0.55
10+US $0.36516US $3.65
30+US $0.27387US $8.22
100+US $0.21910US $21.91
500+US $0.20084US $100.42
1000+US $0.18258US $182.58

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  • Description
  • Alternatives
  • Shopping Guide
Description

The IRF7416TRPBF is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Infineon Technologies. This device is designed for a variety of applications, including power management, motor control, and switching applications, where efficiency and reliability are critical.

Key Features:

  1. Type: N-channel MOSFET
  2. Package: The IRF7416TRPBF is housed in a TO-220 package, which is a standard package for power devices, providing good thermal performance and ease of mounting.
  3. Voltage Rating: The device typically has a maximum drain-source voltage (V_DS) rating of around 60V, making it suitable for medium-voltage applications.
  4. Current Rating: It can handle continuous drain current (I_D) of up to 30A, depending on the thermal conditions and the specific application.
  5. R_DS(on): The on-resistance (R_DS(on)) is low, typically in the range of a few milliohms, which minimizes power loss during operation and enhances efficiency.
  6. Gate Threshold Voltage (V_GS(th)): The gate threshold voltage is designed to be low, allowing for easy drive with standard logic levels.
  7. Switching Speed: The IRF7416TRPBF features fast switching capabilities, making it suitable for high-frequency applications.
  8. Thermal Resistance: The device has a low thermal resistance, which helps in effective heat dissipation, allowing for higher power handling without overheating.

Applications:

  • Power Supply Circuits: Used in DC-DC converters and power management systems.
  • Motor Control: Suitable for driving motors in various applications, including automotive and industrial.
  • Switching Applications: Ideal for use in high-speed switching applications due to its fast response time.

Electrical Characteristics:

  • Maximum Gate-Source Voltage (V_GS): Typically rated at ±20V, ensuring safe operation within specified limits.
  • Body Diode Characteristics: The IRF7416TRPBF includes an intrinsic body diode, which can conduct in the reverse direction, providing additional functionality in certain applications.

Reliability:

Infineon Technologies is known for its commitment to quality and reliability, and the IRF7416TRPBF is no exception. The device is designed to meet stringent automotive and industrial standards, ensuring long-term performance in demanding environments.

Conclusion:

The IRF7416TRPBF from Infineon Technologies is a robust and efficient N-channel MOSFET suitable for a wide range of applications. Its combination of high current handling, low on-resistance, and fast switching capabilities makes it an excellent choice for engineers looking to optimize power management and control in their designs.

Alternatives

Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.

SHIPPING GUIDE

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