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IRF7425TRPBF

  • In Stock: 23100
  • Available: 151721
  • Updated: 8 HRS ago

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $1.58829US $1.59
10+US $1.05886US $10.59
30+US $0.79414US $23.82
100+US $0.63532US $63.53
500+US $0.58237US $291.19
1000+US $0.52943US $529.43

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Product Parameter

  • Manufacturer
    Infineon Technologies
  • Manufacturer's Part No.
    IRF7425TRPBF
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Single
  • Series
    HEXFET®
  • ECCN
    EAR99
  • Mount
    Surface Mount
  • Width
    3.9878mm
  • Height
    1.75mm
  • Length
    4.9784mm
  • FET Type
    P-Channel
  • Lead Free
    Contains Lead
  • Packaging
    Tape & Reel (TR)
  • Published
    2006
  • Rise Time
    20ns
  • Vgs (Max)
    ±12V
  • Resistance
    8.2MOhm
  • Technology
    MOSFET (Metal Oxide)
  • Nominal Vgs
    1.2 V
  • Part Status
    Active
  • Subcategory
    Other Transistors
  • Termination
    SMD/SMT
  • REACH Status
    REACH Unaffected
  • Mounting Type
    Surface Mount
  • Recovery Time
    180 ns
  • Terminal Form
    GULL WING
  • Current Rating
    -15A
  • Number of Pins
    8
  • Operating Mode
    ENHANCEMENT MODE
  • Package / Case
    8-SOIC (0.154, 3.90mm Width)
  • Contact Plating
    Tin
  • Fall Time (Typ)
    160 ns
  • Factory Lead Time
    12 Weeks
  • Power Dissipation
    2.5W
  • Terminal Position
    DUAL
  • Threshold Voltage
    -1.2V
  • Number of Channels
    1
  • Number of Elements
    1
  • Turn On Delay Time
    13 ns
  • Vgs(th) (Max) @ Id
    1.2V @ 250μA
  • Voltage - Rated DC
    -20V
  • Dual Supply Voltage
    20V
  • Radiation Hardening
    No
  • Turn-Off Delay Time
    230 ns
  • Element Configuration
    Single
  • Operating Temperature
    -55°C~150°C TJ
  • Power Dissipation-Max
    2.5W Ta
  • Number of Terminations
    8
  • Rds On (Max) @ Id, Vgs
    8.2m Ω @ 15A, 4.5V
  • Transistor Application
    SWITCHING
  • Reflow Temperature-Max (s)
    30
  • Transistor Element Material
    SILICON
  • Gate Charge (Qg) (Max) @ Vgs
    130nC @ 4.5V
  • Gate to Source Voltage (Vgs)
    12V
  • Continuous Drain Current (ID)
    -15A
  • Max Junction Temperature (Tj)
    150°C
  • Peak Reflow Temperature (Cel)
    260
  • Pulsed Drain Current-Max (IDM)
    60A
  • Drain to Source Breakdown Voltage
    -20V
  • Input Capacitance (Ciss) (Max) @ Vds
    7980pF @ 15V
  • Drive Voltage (Max Rds On,Min Rds On)
    2.5V 4.5V
  • Current - Continuous Drain (Id) @ 25°C
    15A Ta

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • ECCN Code
    EAR99
  • REACH SVHC
    No SVHC
  • RoHS Status
    ROHS3 Compliant
  • JESD-609 Code
    e3
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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