IRF7451PBF
- Manufacturer's Part No.:IRF7451PBF
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:HEXFET®
- Description:MOSFET N-CH 150V 3.6A 8-SOIC
- Datasheet:
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- Available: 3873
Reference Price(In US Dollars)
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1+ | US $0.00000 | US $0.00 |
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Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part No.IRF7451PBF
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesHEXFET®
- ECCNEAR99
- MountSurface Mount
- Width3.9878mm
- Height1.4986mm
- Length4.9784mm
- FET TypeN-Channel
- Lead FreeLead Free
- PackagingTube
- Published2004
- Rise Time4.2ns
- Vgs (Max)±30V
- TechnologyMOSFET (Metal Oxide)
- Nominal Vgs5.5 V
- Part StatusObsolete
- SubcategoryFET General Purpose Power
- TerminationSMD/SMT
- REACH StatusREACH Unaffected
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Mounting TypeSurface Mount
- Terminal FormGULL WING
- Current Rating3.6A
- Number of Pins8
- Operating ModeENHANCEMENT MODE
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Fall Time (Typ)15 ns
- Power Dissipation2.5W
- Terminal PositionDUAL
- Threshold Voltage5.5V
- Number of Elements1
- Turn On Delay Time10 ns
- Vgs(th) (Max) @ Id5.5V @ 250μA
- Voltage - Rated DC150V
- Dual Supply Voltage150V
- Radiation HardeningNo
- Turn-Off Delay Time17 ns
- Power Dissipation-Max2.5W Ta
- Number of Terminations8
- Rds On (Max) @ Id, Vgs90m Ω @ 2.2A, 10V
- Transistor ApplicationSWITCHING
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Gate Charge (Qg) (Max) @ Vgs41nC @ 10V
- Gate to Source Voltage (Vgs)30V
- Continuous Drain Current (ID)3.6A
- Drain-source On Resistance-Max0.09Ohm
- Pulsed Drain Current-Max (IDM)29A
- Drain to Source Breakdown Voltage150V
- Input Capacitance (Ciss) (Max) @ Vds990pF @ 25V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Current - Continuous Drain (Id) @ 25°C3.6A Ta
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- REACH SVHCNo SVHC
- RoHS StatusRoHS Compliant
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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