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IRF7455TRPBF

  • In Stock: 7000
  • Available: 160171

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $2.60400US $2.60
10+US $1.73600US $17.36
30+US $1.30200US $39.06
100+US $1.04160US $104.16
500+US $0.95480US $477.40
1000+US $0.86800US $868.00

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Product Parameter

  • Manufacturer
    Infineon Technologies
  • Manufacturer's Part No.
    IRF7455TRPBF
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Single
  • Series
    HEXFET®
  • ECCN
    EAR99
  • Mount
    Surface Mount
  • Width
    3.9878mm
  • Height
    1.75mm
  • Length
    4.9784mm
  • FET Type
    N-Channel
  • Lead Free
    Contains Lead, Lead Free
  • Packaging
    Tape & Reel (TR)
  • Published
    2004
  • Rise Time
    18ns
  • Vgs (Max)
    ±12V
  • Resistance
    7.5mOhm
  • Technology
    MOSFET (Metal Oxide)
  • Nominal Vgs
    2 V
  • Part Status
    Active
  • REACH Status
    REACH Unaffected
  • Mounting Type
    Surface Mount
  • Recovery Time
    96 ns
  • Terminal Form
    GULL WING
  • Current Rating
    15A
  • Number of Pins
    8
  • Operating Mode
    ENHANCEMENT MODE
  • Package / Case
    8-SOIC (0.154, 3.90mm Width)
  • Fall Time (Typ)
    44 ns
  • Breakdown Voltage
    30V
  • Factory Lead Time
    12 Weeks
  • Power Dissipation
    2.5W
  • Terminal Position
    DUAL
  • Threshold Voltage
    2V
  • Additional Feature
    AVALANCHE RATED
  • Number of Channels
    1
  • Number of Elements
    1
  • Turn On Delay Time
    17 ns
  • Vgs(th) (Max) @ Id
    2V @ 250μA
  • Voltage - Rated DC
    30V
  • Dual Supply Voltage
    30V
  • Radiation Hardening
    No
  • Turn-Off Delay Time
    51 ns
  • Element Configuration
    Single
  • Operating Temperature
    -55°C~150°C TJ
  • Power Dissipation-Max
    2.5W Ta
  • Number of Terminations
    8
  • Rds On (Max) @ Id, Vgs
    7.5m Ω @ 15A, 10V
  • Transistor Application
    SWITCHING
  • Transistor Element Material
    SILICON
  • Gate Charge (Qg) (Max) @ Vgs
    56nC @ 5V
  • Gate to Source Voltage (Vgs)
    12V
  • Avalanche Energy Rating (Eas)
    200 mJ
  • Continuous Drain Current (ID)
    15A
  • Max Junction Temperature (Tj)
    150°C
  • Drain to Source Breakdown Voltage
    30V
  • Input Capacitance (Ciss) (Max) @ Vds
    3480pF @ 25V
  • Drive Voltage (Max Rds On,Min Rds On)
    2.8V 10V
  • Current - Continuous Drain (Id) @ 25°C
    15A Ta

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • ECCN Code
    EAR99
  • REACH SVHC
    No SVHC
  • RoHS Status
    ROHS3 Compliant
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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  • Delivery Time

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