IRF7470TR
- Manufacturer's Part No.:IRF7470TR
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:HEXFET®
- Description:MOSFET N-CH 40V 10A 8-SOIC
- Datasheet:
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- Available: 3818
Reference Price(In US Dollars)
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1+ | US $0.00000 | US $0.00 |
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Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part No.IRF7470TR
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesHEXFET®
- ECCNEAR99
- MountSurface Mount
- FET TypeN-Channel
- Lead FreeContains Lead
- PackagingTape & Reel (TR)
- Published2003
- Rise Time1.9ns
- Vgs (Max)±12V
- TechnologyMOSFET (Metal Oxide)
- Part StatusObsolete
- REACH StatusREACH Unaffected
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JEDEC-95 CodeMS-012AA
- Mounting TypeSurface Mount
- Terminal FormGULL WING
- Current Rating11A
- Number of Pins8
- Operating ModeENHANCEMENT MODE
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Terminal FinishMatte Tin (Sn)
- Terminal PositionDUAL
- Additional FeatureAVALANCHE RATED
- Number of Elements1
- Vgs(th) (Max) @ Id2V @ 250μA
- Voltage - Rated DC40V
- Qualification StatusNot Qualified
- Operating Temperature-55°C~150°C TJ
- Power Dissipation-Max2.5W Ta
- Number of Terminations8
- Rds On (Max) @ Id, Vgs13m Ω @ 10A, 10V
- Transistor ApplicationSWITCHING
- Reflow Temperature-Max (s)NOT SPECIFIED
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs44nC @ 4.5V
- Avalanche Energy Rating (Eas)300 mJ
- Continuous Drain Current (ID)10A
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Drain-source On Resistance-Max0.013Ohm
- Input Capacitance (Ciss) (Max) @ Vds3430pF @ 20V
- Drive Voltage (Max Rds On,Min Rds On)2.8V 10V
- Current - Continuous Drain (Id) @ 25°C10A Ta
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- RoHS StatusRoHS non-compliant
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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