IRF7478TRPBF

The IRF7478TRPBF is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Infineon Technologies. This device is designed for a variety of applications, including power management, motor control, and switching applications, where efficiency and reliability are critical.

Key Features:

1. Type: N-channel MOSFET
2. Package: The IRF7478TRPBF is typically housed in a TO-220 package, which provides excellent thermal performance and allows for easy mounting on heatsinks.
3. Voltage Rating: The device has a maximum drain-source voltage (V_DS) rating of 30V, making it suitable for low-voltage applications.
4. Current Rating: It can handle a continuous drain current (I_D) of up to 60A, which is beneficial for high-current applications.
5. R_DS(on): The on-resistance (R_DS(on)) is low, typically around 10 mΩ at a gate-source voltage (V_GS) of 10V. This low on-resistance contributes to reduced power losses during operation.
6. Gate Threshold Voltage (V_GS(th)): The gate threshold voltage is in the range of 2V to 4V, allowing for efficient switching with lower gate drive voltages.
7. Switching Speed: The IRF7478TRPBF features fast switching capabilities, making it suitable for high-frequency applications.
8. Thermal Resistance: The thermal resistance from junction to case (RθJC) is low, which helps in managing heat dissipation effectively during operation.

Applications:

• Power Supply Circuits: Ideal for use in DC-DC converters and power management systems.
• Motor Control: Suitable for driving motors in various applications, including robotics and industrial automation.
• Switching Regulators: Can be used in synchronous rectification and other switching applications to improve efficiency.
• Automotive Applications: Its robust design makes it suitable for automotive power management systems.

Electrical Characteristics:

• Maximum Gate-Source Voltage (V_GS): ±20V
• Maximum Pulsed Drain Current (I_D,pulse): Up to 120A, allowing for brief high-current applications.
• Body Diode Characteristics: The device includes an intrinsic body diode, which can conduct in reverse and is rated for a certain reverse recovery time, making it useful in applications where reverse current flow is expected.

Reliability:

The IRF7478TRPBF is designed to meet stringent reliability standards, making it suitable for demanding environments. It is also RoHS compliant, ensuring that it meets environmental regulations regarding hazardous substances.

Conclusion:

The IRF7478TRPBF from Infineon Technologies is a versatile and efficient N-channel MOSFET that excels in various applications requiring high current and low voltage operation. Its combination of low on-resistance, high current handling capability, and fast switching speeds makes it a preferred choice for engineers looking to optimize power efficiency in their designs.