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IRF7493TRPBF
- Manufacturer's Part No.:IRF7493TRPBF
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:HEXFET®
- Description:MOSFET N-CH 80V 9.3A 8-SOIC
- Datasheet:
- Quantity:Buy NowAdd to Cart
- Payment:
- Delivery:
- In Stock: 26000
- Available: 28000
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $1.87560 | US $1.88 |
10+ | US $1.25040 | US $12.50 |
30+ | US $0.93780 | US $28.13 |
100+ | US $0.75024 | US $75.02 |
500+ | US $0.68772 | US $343.86 |
1000+ | US $0.62520 | US $625.20 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part No.IRF7493TRPBF
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesHEXFET®
- ECCNEAR99
- MountSurface Mount
- Width3.9878mm
- Height1.4986mm
- Length4.9784mm
- FET TypeN-Channel
- Lead FreeContains Lead, Lead Free
- PackagingTape & Reel (TR)
- Published2003
- Rise Time7.5ns
- Vgs (Max)±20V
- Resistance15MOhm
- TechnologyMOSFET (Metal Oxide)
- Nominal Vgs4 V
- Part StatusActive
- SubcategoryFET General Purpose Power
- TerminationSMD/SMT
- REACH StatusREACH Unaffected
- Mounting TypeSurface Mount
- Recovery Time56 ns
- Terminal FormGULL WING
- Current Rating9.3A
- Number of Pins8
- Operating ModeENHANCEMENT MODE
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Fall Time (Typ)12 ns
- Factory Lead Time12 Weeks
- Power Dissipation2.5W
- Terminal PositionDUAL
- Threshold Voltage4V
- Number of Elements1
- Turn On Delay Time8.3 ns
- Vgs(th) (Max) @ Id4V @ 250μA
- Voltage - Rated DC80V
- Dual Supply Voltage80V
- Radiation HardeningNo
- Turn-Off Delay Time30 ns
- Element ConfigurationSingle
- Operating Temperature-55°C~150°C TJ
- Power Dissipation-Max2.5W Tc
- Number of Terminations8
- Rds On (Max) @ Id, Vgs15m Ω @ 5.6A, 10V
- Transistor ApplicationSWITCHING
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs53nC @ 10V
- Gate to Source Voltage (Vgs)20V
- Continuous Drain Current (ID)9.3A
- Pulsed Drain Current-Max (IDM)74A
- Drain to Source Breakdown Voltage80V
- Input Capacitance (Ciss) (Max) @ Vds1510pF @ 25V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Current - Continuous Drain (Id) @ 25°C9.3A Tc
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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