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IRF7493TR
- Manufacturer's Part No.:IRF7493TR
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:HEXFET®
- Description:MOSFET N-CH 80V 9.3A 8-SOIC
- Datasheet:
- Quantity:RFQAdd to RFQ List
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- In Stock: 8870
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- Available: 8870
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Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part No.IRF7493TR
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesHEXFET®
- ECCNEAR99
- MountSurface Mount
- FET TypeN-Channel
- Lead FreeContains Lead
- PackagingTape & Reel (TR)
- Published2001
- Rise Time7.5ns
- Vgs (Max)±20V
- TechnologyMOSFET (Metal Oxide)
- Part StatusObsolete
- SubcategoryFET General Purpose Power
- REACH StatusREACH Unaffected
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JEDEC-95 CodeMS-012AA
- Mounting TypeSurface Mount
- Terminal FormGULL WING
- Current Rating9.3A
- Number of Pins8
- Operating ModeENHANCEMENT MODE
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Power Dissipation2.5W
- Terminal PositionDUAL
- Number of Elements1
- Vgs(th) (Max) @ Id4V @ 250μA
- Voltage - Rated DC80V
- Operating Temperature-55°C~150°C TJ
- Power Dissipation-Max2.5W Tc
- Number of Terminations8
- Rds On (Max) @ Id, Vgs15m Ω @ 5.6A, 10V
- Transistor ApplicationSWITCHING
- Reflow Temperature-Max (s)NOT SPECIFIED
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs53nC @ 10V
- Continuous Drain Current (ID)9.3A
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Drain-source On Resistance-Max0.015Ohm
- Pulsed Drain Current-Max (IDM)74A
- Drain to Source Breakdown Voltage80V
- Input Capacitance (Ciss) (Max) @ Vds1510pF @ 25V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Current - Continuous Drain (Id) @ 25°C9.3A Tc
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- RoHS StatusRoHS non-compliant
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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