IRF7507PBF
- Manufacturer's Part No.:IRF7507PBF
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:HEXFET®
- Description:MOSFET N/P-CH DUAL 20V MICRO-8
- Datasheet:
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- Available: 3104
Reference Price(In US Dollars)
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Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part No.IRF7507PBF
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Arrays
- SeriesHEXFET®
- ECCNEAR99
- MountSurface Mount
- Width3.05mm
- Height910μm
- Length3.05mm
- FET TypeN and P-Channel
- PackagingTube
- Published1998
- FET FeatureLogic Level Gate
- Nominal Vgs700 mV
- Part StatusDiscontinued
- SubcategoryOther Transistors
- REACH StatusREACH Unaffected
- Mounting TypeSurface Mount
- Terminal FormGULL WING
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Number of Pins8
- Operating ModeENHANCEMENT MODE
- Package / Case8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
- Base Part NumberIRF7507PBF
- Power Dissipation1.25W
- Additional FeatureHIGH RELIABILITY
- Number of Elements2
- Vgs(th) (Max) @ Id700mV @ 250μA (Min)
- Radiation HardeningNo
- Element ConfigurationDual
- Max Power Dissipation1.25W
- Polarity/Channel TypeN-CHANNEL AND P-CHANNEL
- Number of Terminations8
- Rds On (Max) @ Id, Vgs140m Ω @ 1.7A, 4.5V
- Transistor ApplicationSWITCHING
- DS Breakdown Voltage-Min20V
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Drain Current-Max (Abs) (ID)1.3A
- Gate Charge (Qg) (Max) @ Vgs8nC @ 4.5V
- Gate to Source Voltage (Vgs)12V
- Continuous Drain Current (ID)2.4A
- Drain to Source Voltage (Vdss)20V
- Drain-source On Resistance-Max0.14Ohm
- Pulsed Drain Current-Max (IDM)19A
- Input Capacitance (Ciss) (Max) @ Vds260pF @ 15V
- Current - Continuous Drain (Id) @ 25°C2.4A 1.7A
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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