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IRF7509TRPBF

  • In Stock: 5000
  • Available: 3252

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $0.71910US $0.72
10+US $0.47940US $4.79
30+US $0.35955US $10.79
100+US $0.28764US $28.76
500+US $0.26367US $131.84
1000+US $0.23970US $239.70

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Product Parameter

  • Manufacturer
    Infineon Technologies
  • Manufacturer's Part No.
    IRF7509TRPBF
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Arrays
  • Series
    HEXFET®
  • ECCN
    EAR99
  • Mount
    Surface Mount
  • Width
    3.048mm
  • Height
    1.11mm
  • Length
    3.048mm
  • FET Type
    N and P-Channel
  • Lead Free
    Lead Free
  • Packaging
    Tape & Reel (TR)
  • Published
    1998
  • Rise Time
    12ns
  • Resistance
    200mOhm
  • FET Feature
    Logic Level Gate
  • Nominal Vgs
    1 V
  • Part Status
    Active
  • REACH Status
    REACH Unaffected
  • Mounting Type
    Surface Mount
  • Terminal Form
    GULL WING
  • Current Rating
    2.7A
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Number of Pins
    8
  • Operating Mode
    ENHANCEMENT MODE
  • Package / Case
    8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
  • Fall Time (Typ)
    9.3 ns
  • Base Part Number
    IRF7509PBF
  • Factory Lead Time
    12 Weeks
  • Power Dissipation
    1.25W
  • Threshold Voltage
    1V
  • Additional Feature
    ULTRA LOW RESISTANCE
  • Number of Channels
    2
  • Number of Elements
    2
  • Vgs(th) (Max) @ Id
    1V @ 250μA
  • Radiation Hardening
    No
  • Turn-Off Delay Time
    19 ns
  • Element Configuration
    Dual
  • Max Power Dissipation
    1.25W
  • Operating Temperature
    -55°C~150°C TJ
  • Polarity/Channel Type
    N-CHANNEL AND P-CHANNEL
  • Number of Terminations
    8
  • Rds On (Max) @ Id, Vgs
    110m Ω @ 1.7A, 10V
  • Transistor Application
    SWITCHING
  • Transistor Element Material
    SILICON
  • Gate Charge (Qg) (Max) @ Vgs
    12nC @ 10V
  • Gate to Source Voltage (Vgs)
    20V
  • Continuous Drain Current (ID)
    2.7A
  • Max Junction Temperature (Tj)
    150°C
  • Drain to Source Breakdown Voltage
    30V
  • Input Capacitance (Ciss) (Max) @ Vds
    210pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    2.7A 2A

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • REACH SVHC
    No SVHC
  • RoHS Status
    RoHS non-compliant
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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