IRF7509TRPBF
- Manufacturer's Part No.:IRF7509TRPBF
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:HEXFET®
- Description:MOSFET N/P-CH 30V 2.7A/2A MICRO8
- Datasheet:
- Quantity:Buy NowAdd to Cart
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- In Stock: 5000
- Available: 3252
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $0.71910 | US $0.72 |
10+ | US $0.47940 | US $4.79 |
30+ | US $0.35955 | US $10.79 |
100+ | US $0.28764 | US $28.76 |
500+ | US $0.26367 | US $131.84 |
1000+ | US $0.23970 | US $239.70 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part No.IRF7509TRPBF
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Arrays
- SeriesHEXFET®
- ECCNEAR99
- MountSurface Mount
- Width3.048mm
- Height1.11mm
- Length3.048mm
- FET TypeN and P-Channel
- Lead FreeLead Free
- PackagingTape & Reel (TR)
- Published1998
- Rise Time12ns
- Resistance200mOhm
- FET FeatureLogic Level Gate
- Nominal Vgs1 V
- Part StatusActive
- REACH StatusREACH Unaffected
- Mounting TypeSurface Mount
- Terminal FormGULL WING
- Current Rating2.7A
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Number of Pins8
- Operating ModeENHANCEMENT MODE
- Package / Case8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
- Fall Time (Typ)9.3 ns
- Base Part NumberIRF7509PBF
- Factory Lead Time12 Weeks
- Power Dissipation1.25W
- Threshold Voltage1V
- Additional FeatureULTRA LOW RESISTANCE
- Number of Channels2
- Number of Elements2
- Vgs(th) (Max) @ Id1V @ 250μA
- Radiation HardeningNo
- Turn-Off Delay Time19 ns
- Element ConfigurationDual
- Max Power Dissipation1.25W
- Operating Temperature-55°C~150°C TJ
- Polarity/Channel TypeN-CHANNEL AND P-CHANNEL
- Number of Terminations8
- Rds On (Max) @ Id, Vgs110m Ω @ 1.7A, 10V
- Transistor ApplicationSWITCHING
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs12nC @ 10V
- Gate to Source Voltage (Vgs)20V
- Continuous Drain Current (ID)2.7A
- Max Junction Temperature (Tj)150°C
- Drain to Source Breakdown Voltage30V
- Input Capacitance (Ciss) (Max) @ Vds210pF @ 25V
- Current - Continuous Drain (Id) @ 25°C2.7A 2A
Environmental & Export Classifications
- HTSUS8541.29.0095
- REACH SVHCNo SVHC
- RoHS StatusRoHS non-compliant
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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