IRF7530PBF
- Manufacturer's Part No.:IRF7530PBF
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:HEXFET®
- Description:MOSFET 2N-CH 20V 5.4A MICRO8
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- In Stock: 3094
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- Available: 3094
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Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part No.IRF7530PBF
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Arrays
- SeriesHEXFET®
- ECCNEAR99
- MountSurface Mount
- Width3.048mm
- Height910μm
- Length3.048mm
- FET Type2 N-Channel (Dual)
- Lead FreeLead Free
- PackagingTube
- Published2004
- Rise Time11ns
- FET FeatureStandard
- Part StatusDiscontinued
- SubcategoryFET General Purpose Power
- REACH StatusREACH Unaffected
- Mounting TypeSurface Mount
- Terminal FormGULL WING
- Current Rating5.4A
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Number of Pins8
- Operating ModeENHANCEMENT MODE
- Package / Case8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
- Fall Time (Typ)16 ns
- Base Part NumberIRF7530PBF
- Power Dissipation1.3W
- Additional FeatureHIGH RELIABILITY
- Number of Elements2
- Turn On Delay Time8.5 ns
- Vgs(th) (Max) @ Id1.2V @ 250μA
- Voltage - Rated DC20V
- Radiation HardeningNo
- Turn-Off Delay Time36 ns
- Max Power Dissipation1.3W
- Number of Terminations8
- Rds On (Max) @ Id, Vgs30m Ω @ 5.4A, 4.5V
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Gate Charge (Qg) (Max) @ Vgs26nC @ 4.5V
- Gate to Source Voltage (Vgs)12V
- Avalanche Energy Rating (Eas)33 mJ
- Continuous Drain Current (ID)5.4A
- Drain-source On Resistance-Max0.03Ohm
- Pulsed Drain Current-Max (IDM)40A
- Drain to Source Breakdown Voltage20V
- Input Capacitance (Ciss) (Max) @ Vds1310pF @ 15V
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- RoHS StatusROHS3 Compliant
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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