IRF7750
- Manufacturer's Part No.:IRF7750
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:HEXFET®
- Description:MOSFET 2P-CH 20V 4.7A 8-TSSOP
- Datasheet:
- Quantity:RFQAdd to RFQ List
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- Available: 3873
Reference Price(In US Dollars)
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Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part No.IRF7750
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Arrays
- SeriesHEXFET®
- ECCNEAR99
- MountSurface Mount
- FET Type2 P-Channel (Dual)
- HTS Code8541.29.00.95
- Lead FreeContains Lead
- PackagingTube
- Published2007
- FET FeatureLogic Level Gate
- Part StatusObsolete
- SubcategoryOther Transistors
- REACH StatusREACH Unaffected
- ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
- JEDEC-95 CodeMO-153AA
- Mounting TypeSurface Mount
- Terminal FormGULL WING
- Current Rating-4.7A
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Package / Case8-TSSOP (0.173, 4.40mm Width)
- Terminal FinishMATTE TIN
- Base Part NumberIRF7750
- Additional FeatureHIGH RELIABILITY
- Number of Elements2
- Vgs(th) (Max) @ Id1.2V @ 250μA
- Voltage - Rated DC-20V
- Qualification StatusNot Qualified
- Max Power Dissipation1W
- Operating Temperature-55°C~150°C TJ
- Number of Terminations8
- Rds On (Max) @ Id, Vgs30m Ω @ 4.7A, 4.5V
- Transistor ApplicationSWITCHING
- Reflow Temperature-Max (s)30
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs39nC @ 5V
- Continuous Drain Current (ID)4.7A
- Peak Reflow Temperature (Cel)260
- Drain to Source Voltage (Vdss)20V
- Drain-source On Resistance-Max0.03Ohm
- Drain to Source Breakdown Voltage-20V
- Input Capacitance (Ciss) (Max) @ Vds1700pF @ 15V
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- RoHS StatusRoHS non-compliant
- JESD-30 CodeR-PDSO-G8
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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