IRF7751TRPBF
- Manufacturer's Part No.:IRF7751TRPBF
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:HEXFET®
- Description:MOSFET 2P-CH 30V 4.5A 8TSSOP
- Datasheet:
- Quantity:RFQAdd to RFQ List
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- Available: 2433
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $0.00000 | US $0.00 |
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Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part No.IRF7751TRPBF
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Arrays
- SeriesHEXFET®
- ECCNEAR99
- MountSurface Mount
- FET Type2 P-Channel (Dual)
- Lead FreeLead Free
- PackagingTape & Reel (TR)
- Published2006
- Rise Time16ns
- Rds On Max35 mΩ
- FET FeatureLogic Level Gate
- Nominal Vgs-2.5 V
- Part StatusObsolete
- Power - Max1W
- TerminationSMD/SMT
- REACH StatusREACH Unaffected
- Mounting TypeSurface Mount
- Number of Pins8
- Package / Case8-TSSOP (0.173, 4.40mm Width)
- Fall Time (Typ)80 ns
- Base Part NumberIRF7751PBF
- Input Capacitance1.464nF
- Power Dissipation1W
- Threshold Voltage-2.5V
- Number of Elements2
- Turn On Delay Time13 ns
- Vgs(th) (Max) @ Id2.5V @ 250μA
- Dual Supply Voltage-30V
- Radiation HardeningNo
- Turn-Off Delay Time155 ns
- Element ConfigurationDual
- Max Power Dissipation1W
- Operating Temperature-55°C~150°C TJ
- Rds On (Max) @ Id, Vgs35mOhm @ 4.5A, 10V
- Supplier Device Package8-TSSOP
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Drain to Source Resistance35MOhm
- Gate Charge (Qg) (Max) @ Vgs44nC @ 10V
- Gate to Source Voltage (Vgs)20V
- Continuous Drain Current (ID)-4.5A
- Drain to Source Voltage (Vdss)30V
- Drain to Source Breakdown Voltage-30V
- Input Capacitance (Ciss) (Max) @ Vds1464pF @ 25V
- Current - Continuous Drain (Id) @ 25°C4.5A
Environmental & Export Classifications
- HTSUS8541.29.0095
- REACH SVHCNo SVHC
- RoHS StatusRoHS Compliant
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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