IRF7751
- Manufacturer's Part No.:IRF7751
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:HEXFET®
- Description:MOSFET 2P-CH 30V 4.5A 8-TSSOP
- Datasheet:
- Quantity:RFQAdd to RFQ List
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- Available: 3105
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $0.00000 | US $0.00 |
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Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part No.IRF7751
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Arrays
- SeriesHEXFET®
- ECCNEAR99
- MountSurface Mount
- FET Type2 P-Channel (Dual)
- Lead FreeContains Lead
- PackagingTube
- Published2007
- FET FeatureLogic Level Gate
- Part StatusObsolete
- SubcategoryOther Transistors
- REACH StatusREACH Unaffected
- ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
- JEDEC-95 CodeMO-153AA
- Mounting TypeSurface Mount
- Terminal FormGULL WING
- Current Rating-4.5A
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Package / Case8-TSSOP (0.173, 4.40mm Width)
- Terminal FinishMATTE TIN
- Additional FeatureHIGH RELIABILITY
- Number of Elements2
- Vgs(th) (Max) @ Id2.5V @ 250μA
- Voltage - Rated DC-30V
- Qualification StatusNot Qualified
- Max Power Dissipation1W
- Operating Temperature-55°C~150°C TJ
- Number of Terminations8
- Rds On (Max) @ Id, Vgs35m Ω @ 4.5A, 10V
- Transistor ApplicationSWITCHING
- Reflow Temperature-Max (s)30
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs44nC @ 10V
- Continuous Drain Current (ID)4.5A
- Peak Reflow Temperature (Cel)260
- Drain to Source Voltage (Vdss)30V
- Drain-source On Resistance-Max0.035Ohm
- Drain to Source Breakdown Voltage-30V
- Input Capacitance (Ciss) (Max) @ Vds1464pF @ 25V
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- RoHS StatusRoHS non-compliant
- JESD-30 CodeR-PDSO-G8
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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