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IRF7757TRPBF

  • Available: 3804

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $0.00000US $0.00

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Product Parameter

  • Manufacturer
    Infineon Technologies
  • Manufacturer's Part No.
    IRF7757TRPBF
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Arrays
  • Series
    HEXFET®
  • ECCN
    EAR99
  • Mount
    Surface Mount
  • FET Type
    2 N-Channel (Dual)
  • Packaging
    Tape & Reel (TR)
  • Published
    2005
  • Rise Time
    9.2ns
  • Rds On Max
    35 mΩ
  • FET Feature
    Logic Level Gate
  • Nominal Vgs
    1.2 V
  • Part Status
    Obsolete
  • Power - Max
    1.2W
  • Termination
    SMD/SMT
  • REACH Status
    REACH Unaffected
  • Mounting Type
    Surface Mount
  • Number of Pins
    8
  • Package / Case
    8-TSSOP (0.173, 4.40mm Width)
  • Fall Time (Typ)
    14 ns
  • Input Capacitance
    1.34nF
  • Power Dissipation
    1.2W
  • Threshold Voltage
    1.2V
  • Number of Elements
    2
  • Turn On Delay Time
    9.5 ns
  • Vgs(th) (Max) @ Id
    1.2V @ 250μA
  • Dual Supply Voltage
    20V
  • Radiation Hardening
    No
  • Turn-Off Delay Time
    36 ns
  • Element Configuration
    Dual
  • Max Power Dissipation
    1.2W
  • Operating Temperature
    -55°C~150°C TJ
  • Rds On (Max) @ Id, Vgs
    35mOhm @ 4.8A, 4.5V
  • Supplier Device Package
    8-TSSOP
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -55°C
  • Drain to Source Resistance
    35mOhm
  • Gate Charge (Qg) (Max) @ Vgs
    23nC @ 4.5V
  • Gate to Source Voltage (Vgs)
    12V
  • Continuous Drain Current (ID)
    4.8A
  • Drain to Source Voltage (Vdss)
    20V
  • Drain to Source Breakdown Voltage
    20V
  • Input Capacitance (Ciss) (Max) @ Vds
    1340pF @ 15V
  • Current - Continuous Drain (Id) @ 25°C
    4.8A

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • REACH SVHC
    No SVHC
  • RoHS Status
    RoHS Compliant
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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  • Delivery Time

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