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IRF7779L2TRPBF
- Manufacturer's Part No.:IRF7779L2TRPBF
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:HEXFET®
- Description:MOSFET N-CH 150V DIRECTFET L8
- Datasheet:
- Quantity:RFQAdd to RFQ List
- Payment:
- Delivery:
- In Stock: 34569
- Available: 4000
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $5.41046 | US $5.41 |
10+ | US $4.86941 | US $48.69 |
30+ | US $3.78732 | US $113.62 |
100+ | US $3.11101 | US $311.10 |
500+ | US $2.97575 | US $1487.88 |
1000+ | US $2.70523 | US $2705.23 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part No.IRF7779L2TRPBF
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesHEXFET®
- ECCNEAR99
- MountSurface Mount
- Width7.1mm
- Height508μm
- Length9.144mm
- FET TypeN-Channel
- Lead FreeLead Free
- PackagingTape & Reel (TR)
- Published2009
- Rise Time19ns
- Vgs (Max)±20V
- TechnologyMOSFET (Metal Oxide)
- Part StatusActive
- SubcategoryFET General Purpose Power
- REACH StatusREACH Unaffected
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Mounting TypeSurface Mount
- Number of Pins11
- Operating ModeENHANCEMENT MODE
- Package / CaseDirectFET™ Isometric L8
- Case ConnectionDRAIN
- Fall Time (Typ)12 ns
- Terminal FinishTin/Silver/Copper (Sn/Ag/Cu)
- Factory Lead Time12 Weeks
- Power Dissipation125W
- Terminal PositionBOTTOM
- Threshold Voltage4V
- Number of Elements1
- Turn On Delay Time16 ns
- Vgs(th) (Max) @ Id5V @ 250μA
- Radiation HardeningNo
- Turn-Off Delay Time36 ns
- Operating Temperature-55°C~175°C TJ
- Power Dissipation-Max3.3W Ta 125W Tc
- Number of Terminations9
- Rds On (Max) @ Id, Vgs11m Ω @ 40A, 10V
- Transistor ApplicationSWITCHING
- Transistor Element MaterialSILICON
- Drain Current-Max (Abs) (ID)67A
- Gate Charge (Qg) (Max) @ Vgs150nC @ 10V
- Gate to Source Voltage (Vgs)20V
- Avalanche Energy Rating (Eas)270 mJ
- Continuous Drain Current (ID)11A
- Pulsed Drain Current-Max (IDM)270A
- Drain to Source Breakdown Voltage150V
- Input Capacitance (Ciss) (Max) @ Vds6660pF @ 25V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Current - Continuous Drain (Id) @ 25°C375A Tc
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- JESD-30 CodeR-XBCC-N9
- JESD-609 Codee1
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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