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IRF7832TRPBF
- Manufacturer’s Part#:IRF7832TRPBF
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:HEXFET®
- ECAD Model:
- Description:MOSFET N-CH 30V 20A 8-SOIC
- Datasheet:
- Quantity:Buy NowAdd to Cart
- Payment:
- Delivery:
- In Stock: 59000
- Available: 132657
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $0.86625 | US $0.87 |
10+ | US $0.57750 | US $5.78 |
30+ | US $0.43312 | US $12.99 |
100+ | US $0.34650 | US $34.65 |
500+ | US $0.31763 | US $158.82 |
1000+ | US $0.28875 | US $288.75 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part #IRF7832TRPBF
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesHEXFET®
- ECCNEAR99
- MountSurface Mount
- Width3.9878mm
- Height1.75mm
- Length4.9784mm
- FET TypeN-Channel
- Lead FreeContains Lead, Lead Free
- PackagingTape & Reel (TR)
- Published2005
- Rise Time6.7ns
- Vgs (Max)±20V
- Resistance4MOhm
- TechnologyMOSFET (Metal Oxide)
- Nominal Vgs2.32 V
- Part StatusActive
- Row Spacing6.3 mm
- TerminationSMD/SMT
- REACH StatusREACH Unaffected
- Mounting TypeSurface Mount
- Recovery Time62 ns
- Terminal FormGULL WING
- Current Rating20A
- Number of Pins8
- Operating ModeENHANCEMENT MODE
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Contact PlatingTin
- Fall Time (Typ)13 ns
- Factory Lead Time12 Weeks
- Power Dissipation2.5W
- Terminal PositionDUAL
- Threshold Voltage2.32V
- Number of Channels1
- Number of Elements1
- Turn On Delay Time12 ns
- Vgs(th) (Max) @ Id2.32V @ 250μA
- Voltage - Rated DC30V
- Dual Supply Voltage30V
- Radiation HardeningNo
- Turn-Off Delay Time21 ns
- Element ConfigurationSingle
- Operating Temperature-55°C~155°C TJ
- Power Dissipation-Max2.5W Ta
- Number of Terminations8
- Rds On (Max) @ Id, Vgs4m Ω @ 20A, 10V
- Transistor ApplicationSWITCHING
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs51nC @ 4.5V
- Gate to Source Voltage (Vgs)20V
- Avalanche Energy Rating (Eas)260 mJ
- Continuous Drain Current (ID)20A
- Max Junction Temperature (Tj)155°C
- Drain to Source Breakdown Voltage30V
- Input Capacitance (Ciss) (Max) @ Vds4310pF @ 15V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Current - Continuous Drain (Id) @ 25°C20A Ta
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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