IRF7902PBF
- Manufacturer's Part No.:IRF7902PBF
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:HEXFET®
- Description:MOSFET 2N-CH 30V 6.4A/9.7A 8SOIC
- Datasheet:
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- Available: 2759
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $0.00000 | US $0.00 |
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Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part No.IRF7902PBF
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Arrays
- SeriesHEXFET®
- ECCNEAR99
- MountSurface Mount
- Width3.9878mm
- Height1.4986mm
- Length4.9784mm
- FET Type2 N-Channel (Dual)
- Lead FreeLead Free
- PackagingTube
- Published2006
- Rise Time8.6ns
- Rds On Max22.6 mΩ
- Resistance22.6MOhm
- FET FeatureLogic Level Gate
- Part StatusObsolete
- Power - Max1.4W 2W
- REACH StatusREACH Unaffected
- Mounting TypeSurface Mount
- Current Rating6.4A
- Number of Pins8
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Base Part NumberIRF7902PBF
- Input Capacitance580pF
- Power Dissipation2W
- Number of Elements2
- Vgs(th) (Max) @ Id2.25V @ 25μA
- Voltage - Rated DC30V
- Radiation HardeningNo
- Element ConfigurationDual
- Max Power Dissipation2W
- Operating Temperature-55°C~150°C TJ
- Rds On (Max) @ Id, Vgs22.6mOhm @ 6.4A, 10V
- Supplier Device Package8-SO
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Drain to Source Resistance18.7mOhm
- Gate Charge (Qg) (Max) @ Vgs6.9nC @ 4.5V
- Gate to Source Voltage (Vgs)20V
- Continuous Drain Current (ID)9.7A
- Drain to Source Voltage (Vdss)30V
- Drain to Source Breakdown Voltage30V
- Input Capacitance (Ciss) (Max) @ Vds580pF @ 15V
- Current - Continuous Drain (Id) @ 25°C6.4A 9.7A
Environmental & Export Classifications
- HTSUS8541.29.0095
- RoHS StatusRoHS Compliant
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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