IRF7910PBF
- Manufacturer's Part No.:IRF7910PBF
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:HEXFET®
- Description:MOSFET 2N-CH 12V 10A 8-SOIC
- Datasheet:
- Quantity:RFQAdd to RFQ List
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- Delivery:
- Available: 13660
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $0.00000 | US $0.00 |
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Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part No.IRF7910PBF
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Arrays
- SeriesHEXFET®
- ECCNEAR99
- MountSurface Mount
- Width4mm
- Height1.5mm
- Length5mm
- FET Type2 N-Channel (Dual)
- Lead FreeLead Free
- PackagingTube
- Published2004
- Rise Time22ns
- FET FeatureLogic Level Gate
- Nominal Vgs2 V
- Part StatusDiscontinued
- SubcategoryFET General Purpose Power
- TerminationSMD/SMT
- REACH StatusREACH Unaffected
- Mounting TypeSurface Mount
- Terminal FormGULL WING
- Current Rating10A
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Number of Pins8
- Operating ModeENHANCEMENT MODE
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Fall Time (Typ)6.3 ns
- Base Part NumberIRF7910PBF
- Power Dissipation2W
- Threshold Voltage2V
- Number of Elements2
- Turn On Delay Time9.4 ns
- Vgs(th) (Max) @ Id2V @ 250μA
- Voltage - Rated DC12V
- Dual Supply Voltage12V
- Radiation HardeningNo
- Turn-Off Delay Time16 ns
- Element ConfigurationDual
- Max Power Dissipation2W
- Operating Temperature-55°C~150°C TJ
- Number of Terminations8
- Rds On (Max) @ Id, Vgs15m Ω @ 8A, 4.5V
- Transistor ApplicationSWITCHING
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs26nC @ 4.5V
- Gate to Source Voltage (Vgs)12V
- Continuous Drain Current (ID)10A
- Drain-source On Resistance-Max0.015Ohm
- Drain to Source Breakdown Voltage12V
- Input Capacitance (Ciss) (Max) @ Vds1730pF @ 6V
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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