IRF8513PBF
- Manufacturer's Part No.:IRF8513PBF
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- Series:-
- Description:MOSFET 2N-CH 30V 8A/11A 8-SOIC
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- Available: 2868
Reference Price(In US Dollars)
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Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part No.IRF8513PBF
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Arrays
- Series-
- ECCNEAR99
- MountSurface Mount
- Width3.9878mm
- Height1.4986mm
- Length4.9784mm
- FET Type2 N-Channel (Dual)
- Lead FreeLead Free
- PackagingTube
- Published2008
- Rds On Max15.5 mΩ
- Resistance15.5MOhm
- FET FeatureLogic Level Gate
- Nominal Vgs1.8 V
- Part StatusObsolete
- Power - Max1.5W 2.4W
- TerminationSMD/SMT
- REACH StatusREACH Unaffected
- Mounting TypeSurface Mount
- Recovery Time23 ns
- Number of Pins8
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Base Part NumberIRF8513PBF
- Input Capacitance766pF
- Power Dissipation2.4W
- Threshold Voltage1.8V
- Number of Elements2
- Vgs(th) (Max) @ Id2.35V @ 25μA
- Dual Supply Voltage30V
- Radiation HardeningNo
- Element ConfigurationDual
- Max Power Dissipation2.4W
- Operating Temperature-55°C~175°C TJ
- Rds On (Max) @ Id, Vgs15.5mOhm @ 8A, 10V
- Supplier Device Package8-SO
- Max Operating Temperature175°C
- Min Operating Temperature-55°C
- Drain to Source Resistance22.2mOhm
- Gate Charge (Qg) (Max) @ Vgs8.6nC @ 4.5V
- Gate to Source Voltage (Vgs)20V
- Continuous Drain Current (ID)8A
- Drain to Source Voltage (Vdss)30V
- Drain to Source Breakdown Voltage30V
- Input Capacitance (Ciss) (Max) @ Vds766pF @ 15V
- Current - Continuous Drain (Id) @ 25°C8A 11A
Environmental & Export Classifications
- HTSUS8541.29.0095
- REACH SVHCNo SVHC
- RoHS StatusRoHS Compliant
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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