IRF8513TRPBF
- Manufacturer's Part No.:IRF8513TRPBF
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:HEXFET®
- Description:MOSFET 2N-CH 30V 8A/11A 8-SOIC
- Datasheet:
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- Available: 3126
Reference Price(In US Dollars)
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Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part No.IRF8513TRPBF
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Arrays
- SeriesHEXFET®
- ECCNEAR99
- MountSurface Mount
- Width3.9878mm
- Height1.4986mm
- Length4.9784mm
- FET Type2 N-Channel (Dual)
- Lead FreeLead Free
- PackagingTape & Reel (TR)
- Published2008
- FET FeatureLogic Level Gate
- Part StatusObsolete
- Power - Max1.5W 2.4W
- SubcategoryFET General Purpose Power
- REACH StatusREACH Unaffected
- Mounting TypeSurface Mount
- Terminal FormGULL WING
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Number of Pins8
- Operating ModeENHANCEMENT MODE
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Base Part NumberIRF8513PBF
- Power Dissipation1.5W
- Number of Elements2
- Vgs(th) (Max) @ Id2.35V @ 25μA
- Radiation HardeningNo
- Turn-Off Delay Time9.3 ns
- Element ConfigurationDual
- Max Power Dissipation2.4W
- Operating Temperature-55°C~175°C TJ
- Number of Terminations8
- Rds On (Max) @ Id, Vgs15.5m Ω @ 8A, 10V
- Transistor ApplicationSWITCHING
- Transistor Element MaterialSILICON
- Drain Current-Max (Abs) (ID)8A
- Gate Charge (Qg) (Max) @ Vgs8.6nC @ 4.5V
- Gate to Source Voltage (Vgs)20V
- Avalanche Energy Rating (Eas)49 mJ
- Continuous Drain Current (ID)11A
- Drain-source On Resistance-Max0.0155Ohm
- Pulsed Drain Current-Max (IDM)64A
- Drain to Source Breakdown Voltage30V
- Input Capacitance (Ciss) (Max) @ Vds766pF @ 15V
- Current - Continuous Drain (Id) @ 25°C8A 11A
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- RoHS StatusRoHS Compliant
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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