IRF8910GPBF
- Manufacturer's Part No.:IRF8910GPBF
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:HEXFET®
- Description:MOSFET 2N-CH 20V 10A 8-SO
- Datasheet:
- Quantity:RFQAdd to RFQ List
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- Available: 3202
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
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1+ | US $0.00000 | US $0.00 |
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Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part No.IRF8910GPBF
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Arrays
- SeriesHEXFET®
- ECCNEAR99
- MountSurface Mount
- Width3.9878mm
- Height1.4986mm
- FET Type2 N-Channel (Dual)
- PackagingTube
- Published2009
- Rise Time10ns
- Rds On Max13.4 mΩ
- FET FeatureLogic Level Gate
- Part StatusObsolete
- Power - Max2W
- REACH StatusREACH Unaffected
- Mounting TypeSurface Mount
- Number of Pins8
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Fall Time (Typ)4.1 ns
- Base Part NumberIRF8910GPBF
- Input Capacitance960pF
- Power Dissipation2W
- Number of Elements2
- Turn On Delay Time6.2 ns
- Vgs(th) (Max) @ Id2.55V @ 250μA
- Radiation HardeningNo
- Turn-Off Delay Time9.7 ns
- Element ConfigurationDual
- Max Power Dissipation2W
- Operating Temperature-55°C~150°C TJ
- Rds On (Max) @ Id, Vgs13.4mOhm @ 10A, 10V
- Supplier Device Package8-SO
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Drain to Source Resistance18.3mOhm
- Gate Charge (Qg) (Max) @ Vgs11nC @ 4.5V
- Gate to Source Voltage (Vgs)20V
- Continuous Drain Current (ID)10A
- Drain to Source Voltage (Vdss)20V
- Drain to Source Breakdown Voltage20V
- Input Capacitance (Ciss) (Max) @ Vds960pF @ 10V
- Current - Continuous Drain (Id) @ 25°C10A
Environmental & Export Classifications
- HTSUS8541.29.0095
- RoHS StatusRoHS Compliant
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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