IRF9321TRPBF
- Manufacturer's Part No.:IRF9321TRPBF
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- Series:HEXFET®
- Description:MOSFET P-CH 30V 15A 8-SOIC
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- In Stock: 30183
- Available: 257961
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $0.65100 | US $0.65 |
10+ | US $0.43400 | US $4.34 |
30+ | US $0.32550 | US $9.77 |
100+ | US $0.26040 | US $26.04 |
500+ | US $0.23870 | US $119.35 |
1000+ | US $0.21700 | US $217.00 |
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- Description
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The IRF9321TRPBF is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Infineon Technologies. This component is designed for high-efficiency power management applications, making it suitable for a variety of uses in both consumer and industrial electronics.
Key Features:
- Type: N-channel MOSFET
- Package: The IRF9321TRPBF is typically housed in a TO-220 package, which is a standard package for power devices, providing good thermal performance and ease of mounting.
- Voltage Rating: The device has a maximum drain-source voltage (V_DS) of around 30V, making it suitable for low to medium voltage applications.
- Current Rating: It can handle a continuous drain current (I_D) of approximately 50A, which allows it to drive significant loads.
- R_DS(on): The on-resistance (R_DS(on)) is low, typically around 10 mΩ at a gate-source voltage (V_GS) of 10V. This low on-resistance contributes to reduced power losses during operation, enhancing overall efficiency.
- Gate Threshold Voltage (V_GS(th)): The threshold voltage is typically in the range of 2V to 4V, which means it begins to conduct at relatively low gate voltages, making it suitable for logic-level applications.
- Switching Speed: The IRF9321TRPBF features fast switching capabilities, which is essential for applications such as DC-DC converters, motor drivers, and other switching power supplies.
- Thermal Characteristics: The TO-220 package allows for effective heat dissipation, with a maximum junction temperature (T_J) of 175°C. This makes it suitable for high-power applications where thermal management is critical.
- Applications: Common applications include power management in computer systems, automotive electronics, and industrial automation. It is also used in synchronous rectification, power supplies, and motor control circuits.
Electrical Characteristics:
- Gate-Source Voltage (V_GS): ±20V maximum
- Drain-Source Breakdown Voltage (V(BR)DSS): 30V minimum
- Total Gate Charge (Q_g): Typically around 30 nC, which indicates the amount of charge required to turn the MOSFET on and off.
Reliability and Compliance:
The IRF9321TRPBF is designed to meet various industry standards for reliability and performance. It is RoHS compliant, ensuring that it is free from hazardous substances, making it suitable for environmentally conscious designs.
Conclusion:
The IRF9321TRPBF from Infineon Technologies is a robust and efficient N-channel MOSFET that is well-suited for a wide range of applications requiring reliable power management. Its combination of high current handling, low on-resistance, and fast switching capabilities makes it a popular choice among engineers and designers in the electronics industry.
Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.
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