IRF9362TRPBF
- Manufacturer's Part No.:IRF9362TRPBF
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:HEXFET®
- Description:MOSFET 2P-CH 30V 8A 8SOIC
- Datasheet:
- Quantity:Buy NowAdd to Cart
- Payment:
- Delivery:
- In Stock: 1000
- Available: 220599
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $1.26690 | US $1.27 |
10+ | US $0.84460 | US $8.45 |
30+ | US $0.63345 | US $19.00 |
100+ | US $0.50676 | US $50.68 |
500+ | US $0.46453 | US $232.27 |
1000+ | US $0.42230 | US $422.30 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part No.IRF9362TRPBF
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Arrays
- SeriesHEXFET®
- ECCNEAR99
- MountSurface Mount
- Width3.9878mm
- Height1.4986mm
- Length4.9784mm
- FET Type2 P-Channel (Dual)
- Lead FreeLead Free
- PackagingTape & Reel (TR)
- Published2007
- Rise Time5.9ns
- Resistance21MOhm
- FET FeatureLogic Level Gate
- Nominal Vgs-1.8 V
- Part StatusActive
- SubcategoryOther Transistors
- REACH StatusREACH Unaffected
- Mounting TypeSurface Mount
- Terminal FormGULL WING
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Number of Pins8
- Operating ModeENHANCEMENT MODE
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Fall Time (Typ)53 ns
- Terminal FinishMatte Tin (Sn)
- Base Part NumberIRF9362PBF
- Factory Lead Time12 Weeks
- Power Dissipation2W
- Threshold Voltage-1.8V
- Number of Elements2
- Turn On Delay Time5.2 ns
- Vgs(th) (Max) @ Id2.4V @ 25μA
- Radiation HardeningNo
- Turn-Off Delay Time115 ns
- Element ConfigurationDual
- Max Power Dissipation2W
- Operating Temperature-55°C~150°C TJ
- Number of Terminations8
- Rds On (Max) @ Id, Vgs21m Ω @ 8A, 10V
- Transistor ApplicationSWITCHING
- Transistor Element MaterialSILICON
- Drain Current-Max (Abs) (ID)8A
- Gate Charge (Qg) (Max) @ Vgs39nC @ 10V
- Gate to Source Voltage (Vgs)20V
- Avalanche Energy Rating (Eas)94 mJ
- Continuous Drain Current (ID)-8A
- Drain to Source Voltage (Vdss)30V
- Pulsed Drain Current-Max (IDM)64A
- Drain to Source Breakdown Voltage-30V
- Input Capacitance (Ciss) (Max) @ Vds1300pF @ 25V
- Current - Continuous Drain (Id) @ 25°C8A
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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