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IRF9362TRPBF

  • In Stock: 1000
  • Available: 220599

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $1.26690US $1.27
10+US $0.84460US $8.45
30+US $0.63345US $19.00
100+US $0.50676US $50.68
500+US $0.46453US $232.27
1000+US $0.42230US $422.30

Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.

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Product Parameter

  • Manufacturer
    Infineon Technologies
  • Manufacturer's Part No.
    IRF9362TRPBF
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Arrays
  • Series
    HEXFET®
  • ECCN
    EAR99
  • Mount
    Surface Mount
  • Width
    3.9878mm
  • Height
    1.4986mm
  • Length
    4.9784mm
  • FET Type
    2 P-Channel (Dual)
  • Lead Free
    Lead Free
  • Packaging
    Tape & Reel (TR)
  • Published
    2007
  • Rise Time
    5.9ns
  • Resistance
    21MOhm
  • FET Feature
    Logic Level Gate
  • Nominal Vgs
    -1.8 V
  • Part Status
    Active
  • Subcategory
    Other Transistors
  • REACH Status
    REACH Unaffected
  • Mounting Type
    Surface Mount
  • Terminal Form
    GULL WING
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Number of Pins
    8
  • Operating Mode
    ENHANCEMENT MODE
  • Package / Case
    8-SOIC (0.154, 3.90mm Width)
  • Fall Time (Typ)
    53 ns
  • Terminal Finish
    Matte Tin (Sn)
  • Base Part Number
    IRF9362PBF
  • Factory Lead Time
    12 Weeks
  • Power Dissipation
    2W
  • Threshold Voltage
    -1.8V
  • Number of Elements
    2
  • Turn On Delay Time
    5.2 ns
  • Vgs(th) (Max) @ Id
    2.4V @ 25μA
  • Radiation Hardening
    No
  • Turn-Off Delay Time
    115 ns
  • Element Configuration
    Dual
  • Max Power Dissipation
    2W
  • Operating Temperature
    -55°C~150°C TJ
  • Number of Terminations
    8
  • Rds On (Max) @ Id, Vgs
    21m Ω @ 8A, 10V
  • Transistor Application
    SWITCHING
  • Transistor Element Material
    SILICON
  • Drain Current-Max (Abs) (ID)
    8A
  • Gate Charge (Qg) (Max) @ Vgs
    39nC @ 10V
  • Gate to Source Voltage (Vgs)
    20V
  • Avalanche Energy Rating (Eas)
    94 mJ
  • Continuous Drain Current (ID)
    -8A
  • Drain to Source Voltage (Vdss)
    30V
  • Pulsed Drain Current-Max (IDM)
    64A
  • Drain to Source Breakdown Voltage
    -30V
  • Input Capacitance (Ciss) (Max) @ Vds
    1300pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    8A

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • ECCN Code
    EAR99
  • REACH SVHC
    No SVHC
  • RoHS Status
    ROHS3 Compliant
  • JESD-609 Code
    e3
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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