IRF9388PBF
- Manufacturer's Part No.:IRF9388PBF
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:HEXFET®
- Description:MOSFET P-CH 30V 12A 8-SO
- Datasheet:
- Quantity:RFQAdd to RFQ List
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- Available: 3995
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $0.00000 | US $0.00 |
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Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part No.IRF9388PBF
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesHEXFET®
- ECCNEAR99
- MountSurface Mount
- Length4.9784mm
- FET TypeP-Channel
- Lead FreeLead Free
- PackagingTube
- Published2005
- Rise Time57ns
- Vgs (Max)±25V
- TechnologyMOSFET (Metal Oxide)
- Part StatusDiscontinued
- SubcategoryOther Transistors
- REACH StatusREACH Unaffected
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Mounting TypeSurface Mount
- Terminal FormGULL WING
- Number of Pins8
- Operating ModeENHANCEMENT MODE
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Fall Time (Typ)66 ns
- Power Dissipation2.5W
- Terminal PositionDUAL
- Number of Elements1
- Turn On Delay Time19 ns
- Vgs(th) (Max) @ Id2.4V @ 25μA
- Radiation HardeningNo
- Turn-Off Delay Time80 ns
- Operating Temperature-55°C~150°C TJ
- Power Dissipation-Max2.5W Ta
- Number of Terminations8
- Rds On (Max) @ Id, Vgs8.5m Ω @ 12A, 20V
- Transistor ApplicationSWITCHING
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs52nC @ 10V
- Gate to Source Voltage (Vgs)25V
- Continuous Drain Current (ID)12A
- Drain to Source Voltage (Vdss)30V
- Pulsed Drain Current-Max (IDM)96A
- Drain to Source Breakdown Voltage-30V
- Input Capacitance (Ciss) (Max) @ Vds1680pF @ 25V
- Drive Voltage (Max Rds On,Min Rds On)10V 20V
- Current - Continuous Drain (Id) @ 25°C12A Ta
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- RoHS StatusROHS3 Compliant
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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