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IRF9389PBF

  • Available: 2511

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Product Parameter

  • Manufacturer
    Infineon Technologies
  • Manufacturer's Part No.
    IRF9389PBF
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Arrays
  • Series
    HEXFET®
  • ECCN
    EAR99
  • Mount
    Surface Mount
  • FET Type
    N and P-Channel
  • Packaging
    Tube
  • Published
    2004
  • FET Feature
    Logic Level Gate
  • Part Status
    Discontinued
  • Subcategory
    Other Transistors
  • REACH Status
    REACH Unaffected
  • Configuration
    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
  • JEDEC-95 Code
    MS-012AA
  • Mounting Type
    Surface Mount
  • Terminal Form
    GULL WING
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Operating Mode
    ENHANCEMENT MODE
  • Package / Case
    8-SOIC (0.154, 3.90mm Width)
  • Base Part Number
    IRF9389
  • Factory Lead Time
    11 Weeks
  • Terminal Position
    DUAL
  • Number of Elements
    2
  • Vgs(th) (Max) @ Id
    2.3V @ 10μA
  • Max Power Dissipation
    2W
  • Operating Temperature
    -55°C~150°C TJ
  • Polarity/Channel Type
    N-CHANNEL AND P-CHANNEL
  • Number of Terminations
    8
  • Rds On (Max) @ Id, Vgs
    27m Ω @ 6.8A, 10V
  • Transistor Application
    SWITCHING
  • DS Breakdown Voltage-Min
    30V
  • Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Transistor Element Material
    SILICON
  • Drain Current-Max (Abs) (ID)
    6.8A
  • Gate Charge (Qg) (Max) @ Vgs
    14nC @ 10V
  • Continuous Drain Current (ID)
    4.6A
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Drain to Source Voltage (Vdss)
    30V
  • Drain-source On Resistance-Max
    0.027Ohm
  • Pulsed Drain Current-Max (IDM)
    34A
  • Input Capacitance (Ciss) (Max) @ Vds
    398pF @ 15V
  • Current - Continuous Drain (Id) @ 25°C
    6.8A 4.6A

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • ECCN Code
    EAR99
  • RoHS Status
    ROHS3 Compliant
  • JESD-30 Code
    R-PDSO-G8
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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