IRF9410TR
- Manufacturer's Part No.:IRF9410TR
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:HEXFET®
- Description:MOSFET N-CH 30V 7A 8-SOIC
- Datasheet:
- Quantity:RFQAdd to RFQ List
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- Available: 8870
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
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1+ | US $0.00000 | US $0.00 |
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Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part No.IRF9410TR
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesHEXFET®
- ECCNEAR99
- FET TypeN-Channel
- PackagingTape & Reel (TR)
- Published1997
- Vgs (Max)±20V
- TechnologyMOSFET (Metal Oxide)
- Part StatusObsolete
- REACH StatusREACH Unaffected
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JEDEC-95 CodeMS-012AA
- Mounting TypeSurface Mount
- Surface MountYES
- Terminal FormGULL WING
- Operating ModeENHANCEMENT MODE
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Terminal FinishMatte Tin (Sn)
- Terminal PositionDUAL
- Additional FeatureHIGH RELIABILITY
- Number of Elements1
- Vgs(th) (Max) @ Id1V @ 250μA
- Qualification StatusNot Qualified
- Operating Temperature-55°C~150°C TJ
- Power Dissipation-Max2.5W Ta
- Number of Terminations8
- Rds On (Max) @ Id, Vgs30m Ω @ 7A, 10V
- Transistor ApplicationSWITCHING
- DS Breakdown Voltage-Min30V
- Reflow Temperature-Max (s)NOT SPECIFIED
- Transistor Element MaterialSILICON
- Drain Current-Max (Abs) (ID)7A
- Gate Charge (Qg) (Max) @ Vgs27nC @ 10V
- Avalanche Energy Rating (Eas)70 mJ
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Drain to Source Voltage (Vdss)30V
- Drain-source On Resistance-Max0.03Ohm
- Pulsed Drain Current-Max (IDM)37A
- Input Capacitance (Ciss) (Max) @ Vds550pF @ 25V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Current - Continuous Drain (Id) @ 25°C7A Ta
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- RoHS StatusRoHS non-compliant
- JESD-30 CodeR-PDSO-G8
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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