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IRF9530NPBF
- Manufacturer's Part No.:IRF9530NPBF
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:HEXFET®
- Description:MOSFET P-CH 100V 14A TO-220AB
- Datasheet:
- Quantity:Buy NowAdd to Cart
- Payment:
- Delivery:
- In Stock: 20000
- Available: 81321
- Updated: 1 hr ago
Reference Price(In US Dollars)
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1+ | US $0.54450 | US $0.54 |
| 10+ | US $0.36300 | US $3.63 |
| 30+ | US $0.27225 | US $8.17 |
| 100+ | US $0.21780 | US $21.78 |
| 500+ | US $0.19965 | US $99.83 |
| 1000+ | US $0.18150 | US $181.50 |
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Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part No.IRF9530NPBF
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesHEXFET®
- Time@Peak Reflow Temperature-Max (s)30
- Package / CaseTO-220-3
- Part StatusActive
- Operating Temperature-55°C~175°C TJ
- Factory Lead Time12 Weeks
- MountThrough Hole
- Number of Pins3
- PackagingTube
- SubcategoryOther Transistors
- Number of Terminations3
- Peak Reflow Temperature (Cel)250
- Number of Elements1
- Lead FreeLead Free
- Radiation HardeningNo
- Published1998
- Current Rating-14A
- Additional FeatureAVALANCHE RATED, HIGH RELIABILITY
- Voltage - Rated DC-100V
- Case ConnectionDRAIN
- Contact PlatingTin
- Height15.24mm
- Length10.5156mm
- Width4.69mm
- JEDEC-95 CodeTO-220AB
- Mounting TypeThrough Hole
- Transistor Element MaterialSILICON
- Element ConfigurationSingle
- Transistor ApplicationSWITCHING
- TerminationThrough Hole
- Power Dissipation79W
- TechnologyMOSFET (Metal Oxide)
- Power Dissipation-Max79W Tc
- Turn On Delay Time15 ns
- Turn-Off Delay Time45 ns
- Operating ModeENHANCEMENT MODE
- Pulsed Drain Current-Max (IDM)56A
- Avalanche Energy Rating (Eas)250 mJ
- Drain to Source Voltage (Vdss)100V
- Continuous Drain Current (ID)-14A
- Resistance200mOhm
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage-100V
- Threshold Voltage-4V
- FET TypeP-Channel
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds760pF @ 25V
- Gate Charge (Qg) (Max) @ Vgs58nC @ 10V
- Vgs (Max)±20V
- Rise Time58ns
- Fall Time (Typ)46 ns
- Nominal Vgs-4 V
- Dual Supply Voltage-100V
- Recovery Time190 ns
- Lead Pitch2.54mm
- Current - Continuous Drain (Id) @ 25°C14A Tc
- Drive Voltage (Max Rds On,Min Rds On)10V
- Rds On (Max) @ Id, Vgs200m Ω @ 8.4A, 10V
Environmental & Export Classifications
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- ECCN CodeEAR99
- RoHS StatusROHS3 Compliant
- JESD-609 Codee3
- REACH SVHCNo SVHC
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