IRF9910PBF
- Manufacturer's Part No.:IRF9910PBF
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:HEXFET®
- Description:MOSFET 2N-CH 20V 10A/12A 8-SOIC
- Datasheet:
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- Available: 3855
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
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1+ | US $0.00000 | US $0.00 |
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Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part No.IRF9910PBF
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Arrays
- SeriesHEXFET®
- ECCNEAR99
- MountSurface Mount
- Width4mm
- Height1.5mm
- Length5mm
- FET Type2 N-Channel (Dual)
- Lead FreeLead Free
- PackagingTube
- Published2004
- Rise Time14ns
- FET FeatureLogic Level Gate
- Nominal Vgs2.55 V
- Part StatusDiscontinued
- REACH StatusREACH Unaffected
- Mounting TypeSurface Mount
- Terminal FormGULL WING
- Current Rating10A
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Number of Pins8
- Operating ModeENHANCEMENT MODE
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Fall Time (Typ)7.5 ns
- Base Part NumberIRF9910PBF
- Power Dissipation2W
- Threshold Voltage2.55V
- Number of Elements2
- Vgs(th) (Max) @ Id2.55V @ 250μA
- Voltage - Rated DC20V
- Radiation HardeningNo
- Turn-Off Delay Time15 ns
- Element ConfigurationDual
- Max Power Dissipation2W
- Operating Temperature-55°C~150°C TJ
- Number of Terminations8
- Rds On (Max) @ Id, Vgs13.4m Ω @ 10A, 10V
- Transistor ApplicationSWITCHING
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs11nC @ 4.5V
- Gate to Source Voltage (Vgs)20V
- Continuous Drain Current (ID)12A
- Drain-source On Resistance-Max0.0093Ohm
- Drain to Source Breakdown Voltage20V
- Input Capacitance (Ciss) (Max) @ Vds900pF @ 10V
- Current - Continuous Drain (Id) @ 25°C10A 12A
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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