IRF9910TR
- Manufacturer's Part No.:IRF9910TR
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:HEXFET®
- Description:MOSFET 2N-CH 20V 10A 8-SOIC
- Datasheet:
- Quantity:RFQAdd to RFQ List
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- Available: 2142
Reference Price(In US Dollars)
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Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part No.IRF9910TR
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Arrays
- SeriesHEXFET®
- ECCNEAR99
- FET Type2 N-Channel (Dual)
- HTS Code8541.29.00.95
- PackagingTape & Reel (TR)
- Published2004
- FET FeatureLogic Level Gate
- Part StatusObsolete
- Power - Max2W
- SubcategoryFET General Purpose Power
- REACH StatusREACH Unaffected
- ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
- JEDEC-95 CodeMS-012AA
- Mounting TypeSurface Mount
- Surface MountYES
- Terminal FormGULL WING
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Terminal FinishMatte Tin (Sn)
- Number of Elements2
- Vgs(th) (Max) @ Id2.55V @ 250μA
- Operating Temperature-55°C~150°C TJ
- Number of Terminations8
- Rds On (Max) @ Id, Vgs13.4m Ω @ 10A, 10V
- Transistor ApplicationSWITCHING
- DS Breakdown Voltage-Min20V
- Reflow Temperature-Max (s)NOT SPECIFIED
- Power Dissipation-Max (Abs)2W
- Transistor Element MaterialSILICON
- Drain Current-Max (Abs) (ID)10A
- Gate Charge (Qg) (Max) @ Vgs11nC @ 4.5V
- Avalanche Energy Rating (Eas)33 mJ
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Drain to Source Voltage (Vdss)20V
- Drain-source On Resistance-Max0.0134Ohm
- Pulsed Drain Current-Max (IDM)83A
- Input Capacitance (Ciss) (Max) @ Vds900pF @ 10V
- Current - Continuous Drain (Id) @ 25°C10A 12A
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- RoHS StatusRoHS non-compliant
- JESD-30 CodeR-PDSO-G8
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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