IRF9953TRPBF
- Manufacturer's Part No.:IRF9953TRPBF
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:HEXFET®
- Description:MOSFET 2P-CH 30V 2.3A 8-SOIC
- Datasheet:
- Quantity:RFQAdd to RFQ List
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- In Stock: 1000
- Available: 253961
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $0.84000 | US $0.84 |
10+ | US $0.56000 | US $5.60 |
30+ | US $0.42000 | US $12.60 |
100+ | US $0.33600 | US $33.60 |
500+ | US $0.30800 | US $154.00 |
1000+ | US $0.28000 | US $280.00 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part No.IRF9953TRPBF
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Arrays
- SeriesHEXFET®
- ECCNEAR99
- MountSurface Mount
- Width3.9878mm
- Height1.4986mm
- Length4.9784mm
- FET Type2 P-Channel (Dual)
- Lead FreeContains Lead, Lead Free
- PackagingTape & Reel (TR)
- Published2004
- Rise Time14ns
- Resistance250mOhm
- FET FeatureStandard
- Part StatusActive
- REACH StatusREACH Unaffected
- Mounting TypeSurface Mount
- Terminal FormGULL WING
- Current Rating-2.3A
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Number of Pins8
- Operating ModeENHANCEMENT MODE
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Fall Time (Typ)6.9 ns
- Base Part NumberIRF9953PBF
- Factory Lead Time12 Weeks
- Power Dissipation2W
- Additional FeatureHIGH RELIABILITY
- Number of Elements2
- Turn On Delay Time9.7 ns
- Vgs(th) (Max) @ Id1V @ 250μA
- Voltage - Rated DC-30V
- Radiation HardeningNo
- Turn-Off Delay Time20 ns
- Element ConfigurationDual
- Max Power Dissipation2W
- Operating Temperature-55°C~150°C TJ
- Number of Terminations8
- Rds On (Max) @ Id, Vgs250m Ω @ 1A, 10V
- Transistor ApplicationSWITCHING
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs12nC @ 10V
- Gate to Source Voltage (Vgs)20V
- Avalanche Energy Rating (Eas)57 mJ
- Continuous Drain Current (ID)2.3A
- Drain to Source Voltage (Vdss)30V
- Pulsed Drain Current-Max (IDM)10A
- Drain to Source Breakdown Voltage-30V
- Input Capacitance (Ciss) (Max) @ Vds190pF @ 15V
Environmental & Export Classifications
- HTSUS8541.29.0095
- RoHS StatusROHS3 Compliant
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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