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IRF9956TR

  • Available: 3913

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Product Parameter

  • Manufacturer
    Infineon Technologies
  • Manufacturer's Part No.
    IRF9956TR
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Arrays
  • Series
    HEXFET®
  • ECCN
    EAR99
  • FET Type
    2 N-Channel (Dual)
  • Packaging
    Tape & Reel (TR)
  • Published
    2003
  • FET Feature
    Logic Level Gate
  • Part Status
    Obsolete
  • Power - Max
    2W
  • REACH Status
    REACH Unaffected
  • Configuration
    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
  • JEDEC-95 Code
    MS-012AA
  • Mounting Type
    Surface Mount
  • Surface Mount
    YES
  • Terminal Form
    GULL WING
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Operating Mode
    ENHANCEMENT MODE
  • Package / Case
    8-SOIC (0.154, 3.90mm Width)
  • Terminal Finish
    Matte Tin (Sn)
  • Additional Feature
    AVALANCHE RATED, HIGH RELIABILITY
  • Number of Elements
    2
  • Vgs(th) (Max) @ Id
    1V @ 250μA
  • Qualification Status
    Not Qualified
  • Operating Temperature
    -55°C~150°C TJ
  • Number of Terminations
    8
  • Rds On (Max) @ Id, Vgs
    100m Ω @ 2.2A, 10V
  • Transistor Application
    SWITCHING
  • DS Breakdown Voltage-Min
    30V
  • Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Transistor Element Material
    SILICON
  • Drain Current-Max (Abs) (ID)
    3.5A
  • Gate Charge (Qg) (Max) @ Vgs
    14nC @ 10V
  • Avalanche Energy Rating (Eas)
    44 mJ
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Drain to Source Voltage (Vdss)
    30V
  • Drain-source On Resistance-Max
    0.1Ohm
  • Pulsed Drain Current-Max (IDM)
    16A
  • Input Capacitance (Ciss) (Max) @ Vds
    190pF @ 15V
  • Current - Continuous Drain (Id) @ 25°C
    3.5A

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • ECCN Code
    EAR99
  • RoHS Status
    RoHS non-compliant
  • JESD-30 Code
    R-PDSO-G8
  • JESD-609 Code
    e3
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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