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IRF9Z34NSTRLPBF
- Manufacturer's Part No.:IRF9Z34NSTRLPBF
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:HEXFET®
- Description:MOSFET P-CH 55V 19A D2PAK
- Datasheet:
- Quantity:Buy NowAdd to Cart
- Payment:
- Delivery:
- In Stock: 21000
- Available: 143745
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $1.10160 | US $1.10 |
10+ | US $0.73440 | US $7.34 |
30+ | US $0.55080 | US $16.52 |
100+ | US $0.44064 | US $44.06 |
500+ | US $0.40392 | US $201.96 |
1000+ | US $0.36720 | US $367.20 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part No.IRF9Z34NSTRLPBF
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesHEXFET®
- ECCNEAR99
- MountSurface Mount
- Width9.65mm
- Height4.83mm
- Length10.668mm
- FET TypeP-Channel
- Lead FreeContains Lead, Lead Free
- PackagingTape & Reel (TR)
- Published1997
- Rise Time55ns
- Vgs (Max)±20V
- Resistance100mOhm
- TechnologyMOSFET (Metal Oxide)
- Nominal Vgs-4 V
- Part StatusActive
- REACH StatusREACH Unaffected
- Mounting TypeSurface Mount
- Recovery Time82 ns
- Terminal FormGULL WING
- Current Rating-19A
- Number of Pins3
- Operating ModeENHANCEMENT MODE
- Package / CaseTO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Case ConnectionDRAIN
- Fall Time (Typ)41 ns
- Terminal FinishMatte Tin (Sn) - with Nickel (Ni) barrier
- Factory Lead Time12 Weeks
- Power Dissipation68W
- Threshold Voltage-2V
- Additional FeatureAVALANCHE RATED, HIGH RELIABILITY
- Number of Channels1
- Number of Elements1
- Turn On Delay Time13 ns
- Vgs(th) (Max) @ Id4V @ 250μA
- Voltage - Rated DC-55V
- Dual Supply Voltage55V
- Radiation HardeningNo
- Turn-Off Delay Time30 ns
- Element ConfigurationSingle
- Operating Temperature-55°C~175°C TJ
- Power Dissipation-Max3.8W Ta 68W Tc
- Number of Terminations2
- Rds On (Max) @ Id, Vgs100m Ω @ 10A, 10V
- Transistor ApplicationSWITCHING
- Reflow Temperature-Max (s)30
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs35nC @ 10V
- Gate to Source Voltage (Vgs)20V
- Continuous Drain Current (ID)-19A
- Max Junction Temperature (Tj)175°C
- Peak Reflow Temperature (Cel)260
- Pulsed Drain Current-Max (IDM)68A
- Drain to Source Breakdown Voltage-55V
- Input Capacitance (Ciss) (Max) @ Vds620pF @ 25V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Current - Continuous Drain (Id) @ 25°C19A Tc
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- JESD-30 CodeR-PSSO-G2
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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