IRFB4127PBF
- Manufacturer's Part No.:IRFB4127PBF
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:HEXFET®
- Description:MOSFET N-CH 200V 76A TO-220AB
- Datasheet:
- Quantity:Buy NowAdd to Cart
- Payment:
- Delivery:
- In Stock: 27300
- Available: 20781
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $2.21850 | US $2.22 |
10+ | US $1.47900 | US $14.79 |
30+ | US $1.10925 | US $33.28 |
100+ | US $0.88740 | US $88.74 |
500+ | US $0.81345 | US $406.73 |
1000+ | US $0.73950 | US $739.50 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part No.IRFB4127PBF
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesHEXFET®
- ECCNEAR99
- MountThrough Hole
- Width4.826mm
- Height19.8mm
- Length10.668mm
- FET TypeN-Channel
- Lead FreeLead Free
- PackagingTube
- Published2008
- Rise Time18ns
- Vgs (Max)±20V
- Resistance20MOhm
- TechnologyMOSFET (Metal Oxide)
- Nominal Vgs5 V
- Part StatusActive
- SubcategoryFET General Purpose Power
- TerminationThrough Hole
- JEDEC-95 CodeTO-220AB
- Mounting TypeThrough Hole
- Number of Pins3
- Operating ModeENHANCEMENT MODE
- Package / CaseTO-220-3
- Case ConnectionDRAIN
- Fall Time (Typ)22 ns
- Terminal FinishMatte Tin (Sn) - with Nickel (Ni) barrier
- Factory Lead Time12 Weeks
- Power Dissipation375W
- Threshold Voltage5V
- Number of Channels1
- Number of Elements1
- Turn On Delay Time17 ns
- Vgs(th) (Max) @ Id5V @ 250μA
- Dual Supply Voltage200V
- Radiation HardeningNo
- Turn-Off Delay Time56 ns
- Element ConfigurationSingle
- Operating Temperature-55°C~175°C TJ
- Power Dissipation-Max375W Tc
- Number of Terminations3
- Rds On (Max) @ Id, Vgs20m Ω @ 44A, 10V
- Transistor ApplicationSWITCHING
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs150nC @ 10V
- Gate to Source Voltage (Vgs)20V
- Avalanche Energy Rating (Eas)250 mJ
- Continuous Drain Current (ID)76A
- Max Junction Temperature (Tj)175°C
- Drain to Source Breakdown Voltage200V
- Input Capacitance (Ciss) (Max) @ Vds5380pF @ 50V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Current - Continuous Drain (Id) @ 25°C76A Tc
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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