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IRFB41N15DPBF
- Manufacturer's Part No.:IRFB41N15DPBF
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:HEXFET®
- Description:MOSFET N-CH 150V 41A TO-220AB
- Datasheet:
- Quantity:RFQAdd to RFQ List
- Payment:
- Delivery:
- In Stock: 34636
- Available: 2080
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $2.29680 | US $2.30 |
10+ | US $2.06712 | US $20.67 |
30+ | US $1.60776 | US $48.23 |
100+ | US $1.32066 | US $132.07 |
500+ | US $1.26324 | US $631.62 |
1000+ | US $1.14840 | US $1148.40 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part No.IRFB41N15DPBF
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesHEXFET®
- ECCNEAR99
- MountThrough Hole
- Width4.69mm
- Height8.763mm
- Length10.5156mm
- FET TypeN-Channel
- Lead FreeContains Lead, Lead Free
- PackagingTube
- Published2003
- Rise Time63ns
- Vgs (Max)±30V
- TechnologyMOSFET (Metal Oxide)
- Nominal Vgs5.5 V
- Part StatusNot For New Designs
- SubcategoryFET General Purpose Power
- TerminationThrough Hole
- REACH StatusREACH Unaffected
- JEDEC-95 CodeTO-220AB
- Mounting TypeThrough Hole
- Recovery Time260 ns
- Current Rating41A
- Number of Pins3
- Operating ModeENHANCEMENT MODE
- Package / CaseTO-220-3
- Case ConnectionDRAIN
- Fall Time (Typ)14 ns
- Terminal FinishMatte Tin (Sn) - with Nickel (Ni) barrier
- Factory Lead Time14 Weeks
- Power Dissipation200W
- Threshold Voltage5.5V
- Additional FeatureAVALANCHE RATED
- Number of Elements1
- Turn On Delay Time16 ns
- Vgs(th) (Max) @ Id5.5V @ 250μA
- Voltage - Rated DC150V
- Dual Supply Voltage150V
- Radiation HardeningNo
- Turn-Off Delay Time25 ns
- Element ConfigurationSingle
- Operating Temperature-55°C~175°C TJ
- Power Dissipation-Max200W Tc
- Number of Terminations3
- Rds On (Max) @ Id, Vgs45m Ω @ 25A, 10V
- Transistor ApplicationSWITCHING
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs110nC @ 10V
- Gate to Source Voltage (Vgs)30V
- Avalanche Energy Rating (Eas)470 mJ
- Continuous Drain Current (ID)41A
- Drain-source On Resistance-Max0.045Ohm
- Drain to Source Breakdown Voltage150V
- Input Capacitance (Ciss) (Max) @ Vds2520pF @ 25V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Current - Continuous Drain (Id) @ 25°C41A Tc
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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