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IRFB4227PBF

  • In Stock: 10000
  • Available: 9276
  • Updated: 1 Day 22 HRS ago

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $1.19952US $1.20
10+US $0.79968US $8.00
30+US $0.59976US $17.99
100+US $0.47981US $47.98
500+US $0.43982US $219.91
1000+US $0.39984US $399.84

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Product Parameter

  • Manufacturer
    Infineon Technologies
  • Manufacturer's Part No.
    IRFB4227PBF
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Single
  • Series
    HEXFET®
  • ECCN
    EAR99
  • Mount
    Through Hole
  • Width
    4.82mm
  • Height
    19.8mm
  • Length
    10.6426mm
  • FET Type
    N-Channel
  • Lead Free
    Lead Free
  • Packaging
    Tube
  • Published
    2004
  • Rise Time
    20ns
  • Vgs (Max)
    ±30V
  • Resistance
    24MOhm
  • Technology
    MOSFET (Metal Oxide)
  • Nominal Vgs
    5 V
  • Part Status
    Active
  • Subcategory
    FET General Purpose Power
  • Termination
    Through Hole
  • REACH Status
    REACH Unaffected
  • JEDEC-95 Code
    TO-220AB
  • Mounting Type
    Through Hole
  • Recovery Time
    150 ns
  • Number of Pins
    3
  • Operating Mode
    ENHANCEMENT MODE
  • Package / Case
    TO-220-3
  • Case Connection
    DRAIN
  • Fall Time (Typ)
    31 ns
  • Factory Lead Time
    12 Weeks
  • Power Dissipation
    330W
  • Threshold Voltage
    5V
  • Number of Channels
    1
  • Number of Elements
    1
  • Turn On Delay Time
    33 ns
  • Vgs(th) (Max) @ Id
    5V @ 250μA
  • Dual Supply Voltage
    200V
  • Radiation Hardening
    No
  • Turn-Off Delay Time
    21 ns
  • Element Configuration
    Single
  • Operating Temperature
    -40°C~175°C TJ
  • Power Dissipation-Max
    330W Tc
  • Number of Terminations
    3
  • Rds On (Max) @ Id, Vgs
    24m Ω @ 46A, 10V
  • Transistor Application
    SWITCHING
  • Transistor Element Material
    SILICON
  • Gate Charge (Qg) (Max) @ Vgs
    98nC @ 10V
  • Gate to Source Voltage (Vgs)
    30V
  • Continuous Drain Current (ID)
    65A
  • Max Junction Temperature (Tj)
    175°C
  • Pulsed Drain Current-Max (IDM)
    260A
  • Drain to Source Breakdown Voltage
    200V
  • Input Capacitance (Ciss) (Max) @ Vds
    4600pF @ 25V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Current - Continuous Drain (Id) @ 25°C
    65A Tc

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • ECCN Code
    EAR99
  • REACH SVHC
    No SVHC
  • RoHS Status
    ROHS3 Compliant
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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