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IRFB42N20DPBF

  • Available: 29687

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $24.00000US $24.00
10+US $18.00000US $180.00
30+US $15.60000US $468.00
100+US $13.80000US $1380.00
500+US $12.96000US $6480.00
1000+US $12.00000US $12000.00

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Product Parameter

  • Manufacturer
    Infineon Technologies
  • Manufacturer's Part No.
    IRFB42N20DPBF
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Single
  • Series
    HEXFET®
  • ECCN
    EAR99
  • Mount
    Through Hole
  • Width
    4.69mm
  • Height
    15.24mm
  • Length
    10.5156mm
  • FET Type
    N-Channel
  • Lead Free
    Contains Lead, Lead Free
  • Packaging
    Tube
  • Published
    2001
  • Rise Time
    69ns
  • Vgs (Max)
    ±30V
  • Resistance
    55Ohm
  • Technology
    MOSFET (Metal Oxide)
  • Nominal Vgs
    5.5 V
  • Part Status
    Not For New Designs
  • Subcategory
    FET General Purpose Power
  • REACH Status
    REACH Unaffected
  • JEDEC-95 Code
    TO-220AB
  • Mounting Type
    Through Hole
  • Recovery Time
    330 ns
  • Current Rating
    42A
  • Number of Pins
    3
  • Operating Mode
    ENHANCEMENT MODE
  • Package / Case
    TO-220-3
  • Case Connection
    DRAIN
  • Fall Time (Typ)
    32 ns
  • Factory Lead Time
    12 Weeks
  • Power Dissipation
    300W
  • Threshold Voltage
    5.5V
  • Number of Elements
    1
  • Turn On Delay Time
    18 ns
  • Vgs(th) (Max) @ Id
    5.5V @ 250μA
  • Voltage - Rated DC
    200V
  • Dual Supply Voltage
    200V
  • Radiation Hardening
    No
  • Turn-Off Delay Time
    29 ns
  • Element Configuration
    Single
  • Operating Temperature
    -55°C~175°C TJ
  • Power Dissipation-Max
    2.4W Ta 330W Tc
  • Number of Terminations
    3
  • Rds On (Max) @ Id, Vgs
    55m Ω @ 26A, 10V
  • Transistor Application
    SWITCHING
  • Transistor Element Material
    SILICON
  • Drain Current-Max (Abs) (ID)
    42.6A
  • Gate Charge (Qg) (Max) @ Vgs
    140nC @ 10V
  • Gate to Source Voltage (Vgs)
    30V
  • Continuous Drain Current (ID)
    44A
  • Drain to Source Breakdown Voltage
    200V
  • Input Capacitance (Ciss) (Max) @ Vds
    3430pF @ 25V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Current - Continuous Drain (Id) @ 25°C
    44A Tc

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • ECCN Code
    EAR99
  • REACH SVHC
    No SVHC
  • RoHS Status
    ROHS3 Compliant
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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