IRFB42N20D

The IRFB42N20D is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Infineon Technologies. This device is designed for applications requiring efficient power management and switching capabilities, making it suitable for a variety of uses in power supplies, motor drives, and other high-current applications.

Key Features:

1. Voltage Rating: The IRFB42N20D has a maximum drain-source voltage (V_DS) of 200 volts, allowing it to handle high-voltage applications effectively.

2. Current Rating: It can handle a continuous drain current (I_D) of up to 42 amperes, which makes it capable of managing substantial loads without overheating.

3. R_DS(on): The on-resistance (R_DS(on)) is typically low, around 0.055 ohms at a gate-source voltage (V_GS) of 10 volts. This low on-resistance contributes to reduced power losses during operation, enhancing overall efficiency.

4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is in the range of 2 to 4 volts, which allows for easy drive with standard logic levels.

5. Package Type: The IRFB42N20D is typically housed in a TO-220 package, which provides good thermal performance and allows for easy mounting to heatsinks for effective heat dissipation.

6. Thermal Characteristics: The device has a maximum junction temperature (T_J) of 175 degrees Celsius, which provides a robust operating range for demanding applications.

7. Switching Performance: The IRFB42N20D is designed for fast switching, making it suitable for high-frequency applications. Its low gate charge (Q_g) minimizes the energy required to switch the device on and off, further enhancing efficiency.

8. Applications: Common applications include DC-DC converters, motor control circuits, and other power management systems where high efficiency and reliability are critical.

Electrical Characteristics:

• V_DS (Max): 200V
• I_D (Max): 42A
• R_DS(on): 0.055Ω (at V_GS = 10V)
• V_GS(th): 2-4V
• T_J (Max): 175°C

Conclusion:

The IRFB42N20D from Infineon Technologies is a versatile and efficient N-channel MOSFET that is well-suited for a wide range of power applications. Its combination of high voltage and current ratings, low on-resistance, and fast switching capabilities make it an excellent choice for engineers looking to optimize performance in their designs.