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IRFB4410PBF
- Manufacturer's Part No.:IRFB4410PBF
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:HEXFET®
- Description:MOSFET N-CH 100V 96A TO-220AB
- Datasheet:
- Quantity:Buy NowAdd to Cart
- Payment:
- Delivery:
- In Stock: 9330
- Available: 33519
Reference Price(In US Dollars)
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1+ | US $2.55960 | US $2.56 |
| 10+ | US $1.70640 | US $17.06 |
| 30+ | US $1.27980 | US $38.39 |
| 100+ | US $1.02384 | US $102.38 |
| 500+ | US $0.93852 | US $469.26 |
| 1000+ | US $0.85320 | US $853.20 |
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Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part No.IRFB4410PBF
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesHEXFET®
- ECCNEAR99
- MountThrough Hole
- Width4.82mm
- Height9.017mm
- Length10.6426mm
- FET TypeN-Channel
- Lead FreeLead Free
- PackagingTube
- Published2004
- Rise Time80ns
- Vgs (Max)±20V
- Lead Pitch2.54mm
- Resistance10mOhm
- TechnologyMOSFET (Metal Oxide)
- Nominal Vgs4 V
- Part StatusActive
- SubcategoryFET General Purpose Power
- REACH StatusREACH Unaffected
- JEDEC-95 CodeTO-220AB
- Mounting TypeThrough Hole
- Current Rating96A
- Number of Pins3
- Operating ModeENHANCEMENT MODE
- Package / CaseTO-220-3
- Fall Time (Typ)50 ns
- Terminal FinishMATTE TIN OVER NICKEL
- Factory Lead Time12 Weeks
- Power Dissipation250W
- Threshold Voltage4V
- Number of Elements1
- Turn On Delay Time24 ns
- Vgs(th) (Max) @ Id4V @ 150μA
- Voltage - Rated DC100V
- Dual Supply Voltage100V
- Radiation HardeningNo
- Turn-Off Delay Time55 ns
- Element ConfigurationSingle
- Operating Temperature-55°C~175°C TJ
- Power Dissipation-Max200W Tc
- Reverse Recovery Time38 ns
- Number of Terminations3
- Rds On (Max) @ Id, Vgs10m Ω @ 58A, 10V
- Transistor ApplicationSWITCHING
- Reflow Temperature-Max (s)30
- Transistor Element MaterialSILICON
- Drain Current-Max (Abs) (ID)75A
- Gate Charge (Qg) (Max) @ Vgs180nC @ 10V
- Gate to Source Voltage (Vgs)20V
- Avalanche Energy Rating (Eas)220 mJ
- Continuous Drain Current (ID)88A
- Peak Reflow Temperature (Cel)250
- Drain to Source Breakdown Voltage100V
- Input Capacitance (Ciss) (Max) @ Vds5150pF @ 50V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Current - Continuous Drain (Id) @ 25°C88A Tc
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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