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IRFB4410ZPBF

  • In Stock: 48000
  • Available: 48963

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $0.88740US $0.89
10+US $0.59160US $5.92
30+US $0.44370US $13.31
100+US $0.35496US $35.50
500+US $0.32538US $162.69
1000+US $0.29580US $295.80

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Product Parameter

  • Manufacturer
    Infineon Technologies
  • Manufacturer's Part No.
    IRFB4410ZPBF
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Single
  • Series
    HEXFET®
  • ECCN
    EAR99
  • Mount
    Through Hole
  • Width
    4.82mm
  • Height
    19.8mm
  • Length
    10.6426mm
  • FET Type
    N-Channel
  • Lead Free
    Lead Free
  • Packaging
    Tube
  • Published
    2004
  • Rise Time
    52ns
  • Vgs (Max)
    ±20V
  • Resistance
    9MOhm
  • Technology
    MOSFET (Metal Oxide)
  • Nominal Vgs
    4 V
  • Part Status
    Active
  • Subcategory
    FET General Purpose Power
  • Termination
    Through Hole
  • REACH Status
    REACH Unaffected
  • JEDEC-95 Code
    TO-220AB
  • Mounting Type
    Through Hole
  • Recovery Time
    57 ns
  • Number of Pins
    3
  • Operating Mode
    ENHANCEMENT MODE
  • Package / Case
    TO-220-3
  • Case Connection
    DRAIN
  • Fall Time (Typ)
    57 ns
  • Terminal Finish
    MATTE TIN OVER NICKEL
  • Factory Lead Time
    12 Weeks
  • Power Dissipation
    230W
  • Threshold Voltage
    2V
  • Number of Channels
    1
  • Number of Elements
    1
  • Turn On Delay Time
    16 ns
  • Vgs(th) (Max) @ Id
    4V @ 150μA
  • Dual Supply Voltage
    100V
  • Radiation Hardening
    No
  • Turn-Off Delay Time
    43 ns
  • Element Configuration
    Single
  • Operating Temperature
    -55°C~175°C TJ
  • Power Dissipation-Max
    230W Tc
  • Number of Terminations
    3
  • Rds On (Max) @ Id, Vgs
    9m Ω @ 58A, 10V
  • Transistor Application
    SWITCHING
  • Reflow Temperature-Max (s)
    30
  • Transistor Element Material
    SILICON
  • Drain Current-Max (Abs) (ID)
    97A
  • Gate Charge (Qg) (Max) @ Vgs
    120nC @ 10V
  • Gate to Source Voltage (Vgs)
    20V
  • Avalanche Energy Rating (Eas)
    242 mJ
  • Continuous Drain Current (ID)
    96A
  • Max Junction Temperature (Tj)
    175°C
  • Peak Reflow Temperature (Cel)
    250
  • Drain to Source Breakdown Voltage
    100V
  • Input Capacitance (Ciss) (Max) @ Vds
    4820pF @ 50V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Current - Continuous Drain (Id) @ 25°C
    97A Tc

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • ECCN Code
    EAR99
  • REACH SVHC
    No SVHC
  • RoHS Status
    ROHS3 Compliant
  • JESD-609 Code
    e3
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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