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IRFB4610PBF
- Manufacturer's Part No.:IRFB4610PBF
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:HEXFET®
- Description:MOSFET N-CH 100V 73A TO-220AB
- Datasheet:
- Quantity:RFQAdd to RFQ List
- Payment:
- Delivery:
- In Stock: 51818
- Available: 45618
Reference Price(In US Dollars)
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1+ | US $2.14600 | US $2.15 |
| 10+ | US $1.93140 | US $19.31 |
| 30+ | US $1.50220 | US $45.07 |
| 100+ | US $1.23395 | US $123.40 |
| 500+ | US $1.18030 | US $590.15 |
| 1000+ | US $1.07300 | US $1073.00 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Quick RFQ
Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part No.IRFB4610PBF
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesHEXFET®
- ECCNEAR99
- MountThrough Hole
- Width4.69mm
- Height8.77mm
- Length10.54mm
- FET TypeN-Channel
- Lead FreeLead Free
- PackagingTube
- Published2006
- Rise Time87ns
- Vgs (Max)±20V
- Lead Pitch2.54mm
- Resistance14mOhm
- TechnologyMOSFET (Metal Oxide)
- Nominal Vgs4 V
- Part StatusActive
- SubcategoryFET General Purpose Power
- REACH StatusREACH Unaffected
- JEDEC-95 CodeTO-220AB
- Mounting TypeThrough Hole
- Recovery Time53 ns
- Current Rating73A
- Number of Pins3
- Operating ModeENHANCEMENT MODE
- Package / CaseTO-220-3
- Case ConnectionDRAIN
- Fall Time (Typ)70 ns
- Factory Lead Time12 Weeks
- Power Dissipation190W
- Threshold Voltage4V
- Number of Elements1
- Turn On Delay Time18 ns
- Vgs(th) (Max) @ Id4V @ 100μA
- Voltage - Rated DC100V
- Dual Supply Voltage100V
- Turn-Off Delay Time3 ns
- Qualification StatusNot Qualified
- Element ConfigurationSingle
- Operating Temperature-55°C~175°C TJ
- Power Dissipation-Max190W Tc
- Reverse Recovery Time35 ns
- Number of Terminations3
- Rds On (Max) @ Id, Vgs14m Ω @ 44A, 10V
- Transistor ApplicationSWITCHING
- Reflow Temperature-Max (s)NOT SPECIFIED
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs140nC @ 10V
- Gate to Source Voltage (Vgs)20V
- Continuous Drain Current (ID)73A
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Pulsed Drain Current-Max (IDM)290A
- Drain to Source Breakdown Voltage100V
- Input Capacitance (Ciss) (Max) @ Vds3550pF @ 50V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Current - Continuous Drain (Id) @ 25°C73A Tc
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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