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IRFH5004TRPBF

  • Available: 4000

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $2.65161US $2.65
10+US $1.76774US $17.68
30+US $1.32581US $39.77
100+US $1.06064US $106.06
500+US $0.97226US $486.13
1000+US $0.88387US $883.87

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Product Parameter

  • Manufacturer
    Infineon Technologies
  • Manufacturer's Part No.
    IRFH5004TRPBF
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Single
  • Series
    HEXFET®
  • ECCN
    EAR99
  • Mount
    Surface Mount
  • Width
    5mm
  • Height
    838.2μm
  • Length
    5.9944mm
  • FET Type
    N-Channel
  • Lead Free
    Lead Free
  • Packaging
    Tape & Reel (TR)
  • Published
    2012
  • Rise Time
    39ns
  • Vgs (Max)
    ±20V
  • Technology
    MOSFET (Metal Oxide)
  • Nominal Vgs
    4 V
  • Part Status
    Active
  • Subcategory
    FET General Purpose Power
  • REACH Status
    REACH Unaffected
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Mounting Type
    Surface Mount
  • Number of Pins
    8
  • Operating Mode
    ENHANCEMENT MODE
  • Package / Case
    8-PowerVDFN
  • Case Connection
    DRAIN
  • Fall Time (Typ)
    16 ns
  • Terminal Finish
    Matte Tin (Sn)
  • Factory Lead Time
    12 Weeks
  • Power Dissipation
    3.6W
  • Terminal Position
    DUAL
  • Threshold Voltage
    4V
  • Number of Elements
    1
  • Turn On Delay Time
    13 ns
  • Vgs(th) (Max) @ Id
    4V @ 150μA
  • Radiation Hardening
    No
  • Turn-Off Delay Time
    28 ns
  • Operating Temperature
    -55°C~150°C TJ
  • Power Dissipation-Max
    3.6W Ta 156W Tc
  • Number of Terminations
    5
  • Rds On (Max) @ Id, Vgs
    2.6m Ω @ 50A, 10V
  • Transistor Application
    SWITCHING
  • Reflow Temperature-Max (s)
    30
  • Transistor Element Material
    SILICON
  • Gate Charge (Qg) (Max) @ Vgs
    110nC @ 10V
  • Gate to Source Voltage (Vgs)
    20V
  • Avalanche Energy Rating (Eas)
    340 mJ
  • Continuous Drain Current (ID)
    100A
  • Peak Reflow Temperature (Cel)
    260
  • Drain-source On Resistance-Max
    0.0026Ohm
  • Pulsed Drain Current-Max (IDM)
    400A
  • Drain to Source Breakdown Voltage
    40V
  • Input Capacitance (Ciss) (Max) @ Vds
    4490pF @ 20V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Current - Continuous Drain (Id) @ 25°C
    28A Ta 100A Tc

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • ECCN Code
    EAR99
  • REACH SVHC
    No SVHC
  • RoHS Status
    ROHS3 Compliant
  • JESD-30 Code
    R-PDSO-N5
  • JESD-609 Code
    e3
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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