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IRFH5006TRPBF
- Manufacturer's Part No.:IRFH5006TRPBF
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:HEXFET®
- Description:MOSFET N-CH 60V 100A 8-PQFN
- Datasheet:
- Quantity:Buy NowAdd to Cart
- Payment:
- Delivery:
- In Stock: 27392
- Available: 12000
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $2.63940 | US $2.64 |
10+ | US $1.75960 | US $17.60 |
30+ | US $1.31970 | US $39.59 |
100+ | US $1.05576 | US $105.58 |
500+ | US $0.96778 | US $483.89 |
1000+ | US $0.87980 | US $879.80 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part No.IRFH5006TRPBF
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesHEXFET®
- ECCNEAR99
- MountSurface Mount
- Width5.15mm
- Height990.6μm
- Length6.1468mm
- FET TypeN-Channel
- Lead FreeLead Free
- PackagingTape & Reel (TR)
- Published2010
- Rise Time13ns
- Vgs (Max)±20V
- Resistance4.1MOhm
- TechnologyMOSFET (Metal Oxide)
- Nominal Vgs2 V
- Part StatusActive
- SubcategoryFET General Purpose Power
- REACH StatusREACH Unaffected
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Mounting TypeSurface Mount
- Number of Pins8
- Operating ModeENHANCEMENT MODE
- Package / Case8-PowerTDFN
- Case ConnectionDRAIN
- Fall Time (Typ)12 ns
- Terminal FinishMatte Tin (Sn)
- Factory Lead Time12 Weeks
- Power Dissipation156W
- Terminal PositionDUAL
- Threshold Voltage2V
- Number of Elements1
- Turn On Delay Time9.6 ns
- Vgs(th) (Max) @ Id4V @ 150μA
- Radiation HardeningNo
- Turn-Off Delay Time30 ns
- Operating Temperature-55°C~150°C TJ
- Power Dissipation-Max3.6W Ta 156W Tc
- Number of Terminations5
- Rds On (Max) @ Id, Vgs4.1m Ω @ 50A, 10V
- Transistor ApplicationSWITCHING
- Reflow Temperature-Max (s)40
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs100nC @ 10V
- Gate to Source Voltage (Vgs)20V
- Continuous Drain Current (ID)100A
- Peak Reflow Temperature (Cel)260
- Pulsed Drain Current-Max (IDM)400A
- Drain to Source Breakdown Voltage60V
- Input Capacitance (Ciss) (Max) @ Vds4175pF @ 30V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Current - Continuous Drain (Id) @ 25°C21A Ta 100A Tc
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- JESD-30 CodeR-PDSO-N5
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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