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IRFH5020TRPBF

  • In Stock: 96000
  • Available: 87926

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $2.58800US $2.59
10+US $2.32920US $23.29
30+US $1.81160US $54.35
100+US $1.48810US $148.81
500+US $1.42340US $711.70
1000+US $1.29400US $1294.00

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Product Parameter

  • Manufacturer
    Infineon Technologies
  • Manufacturer's Part No.
    IRFH5020TRPBF
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Single
  • Series
    HEXFET®
  • ECCN
    EAR99
  • Mount
    Surface Mount
  • Width
    5mm
  • Height
    1.05mm
  • Length
    6mm
  • FET Type
    N-Channel
  • Lead Free
    Lead Free
  • Packaging
    Tape & Reel (TR)
  • Published
    2012
  • Rise Time
    7.7ns
  • Vgs (Max)
    ±20V
  • Resistance
    55MOhm
  • Technology
    MOSFET (Metal Oxide)
  • Part Status
    Active
  • Subcategory
    FET General Purpose Power
  • REACH Status
    REACH Unaffected
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Mounting Type
    Surface Mount
  • Number of Pins
    8
  • Operating Mode
    ENHANCEMENT MODE
  • Package / Case
    8-PowerTDFN
  • Case Connection
    DRAIN
  • Fall Time (Typ)
    6 ns
  • Terminal Finish
    Matte Tin (Sn)
  • Factory Lead Time
    12 Weeks
  • Power Dissipation
    3.6W
  • Terminal Position
    DUAL
  • Threshold Voltage
    5V
  • Additional Feature
    HIGH RELIABILITY
  • Number of Channels
    1
  • Number of Elements
    1
  • Turn On Delay Time
    9.3 ns
  • Vgs(th) (Max) @ Id
    5V @ 150μA
  • Radiation Hardening
    No
  • Turn-Off Delay Time
    21 ns
  • Operating Temperature
    -55°C~150°C TJ
  • Power Dissipation-Max
    3.6W Ta 8.3W Tc
  • Number of Terminations
    5
  • Rds On (Max) @ Id, Vgs
    55m Ω @ 7.5A, 10V
  • Transistor Application
    SWITCHING
  • Transistor Element Material
    SILICON
  • Drain Current-Max (Abs) (ID)
    43A
  • Gate Charge (Qg) (Max) @ Vgs
    54nC @ 10V
  • Gate to Source Voltage (Vgs)
    20V
  • Avalanche Energy Rating (Eas)
    320 mJ
  • Continuous Drain Current (ID)
    5.1A
  • Max Junction Temperature (Tj)
    150°C
  • Pulsed Drain Current-Max (IDM)
    63A
  • Drain to Source Breakdown Voltage
    200V
  • Input Capacitance (Ciss) (Max) @ Vds
    2290pF @ 100V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Current - Continuous Drain (Id) @ 25°C
    5.1A Ta

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • ECCN Code
    EAR99
  • REACH SVHC
    No SVHC
  • RoHS Status
    ROHS3 Compliant
  • JESD-30 Code
    R-PDSO-N5
  • JESD-609 Code
    e3
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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