Image is for your reference only, please check specifications for details
iconCompare
icon

IRFH7911TRPBF

  • In Stock: 74750
  • Available: 74750

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $2.40214US $2.40
10+US $2.16193US $21.62
30+US $1.68150US $50.45
100+US $1.38123US $138.12
500+US $1.32118US $660.59
1000+US $1.20107US $1201.07

Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.

Quick RFQ
  • esd
  • as
  • iso14001
  • iso9001
  • D&B

Product Parameter

  • Manufacturer
    Infineon Technologies
  • Manufacturer's Part No.
    IRFH7911TRPBF
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Arrays
  • Series
    HEXFET®
  • ECCN
    EAR99
  • Mount
    Surface Mount
  • Width
    5mm
  • Height
    939.8μm
  • Length
    5.9944mm
  • FET Type
    2 N-Channel (Dual)
  • Lead Free
    Lead Free
  • Packaging
    Tape & Reel (TR)
  • Published
    2011
  • Resistance
    8.6MOhm
  • FET Feature
    Logic Level Gate
  • Nominal Vgs
    2.35 V
  • Part Status
    Not For New Designs
  • Power - Max
    2.4W 3.4W
  • Subcategory
    FET General Purpose Power
  • REACH Status
    REACH Unaffected
  • Mounting Type
    Surface Mount
  • Terminal Form
    NO LEAD
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Number of Pins
    18
  • Operating Mode
    ENHANCEMENT MODE
  • Package / Case
    18-PowerVQFN
  • Case Connection
    DRAIN SOURCE
  • Terminal Finish
    Matte Tin (Sn)
  • Base Part Number
    IRFH7911PBF
  • Factory Lead Time
    39 Weeks
  • Power Dissipation
    2.4W
  • Terminal Position
    QUAD
  • Additional Feature
    HIGH RELIABILITY
  • Number of Elements
    2
  • Vgs(th) (Max) @ Id
    2.35V @ 25μA
  • Qualification Status
    Not Qualified
  • Element Configuration
    Dual
  • Max Power Dissipation
    3.4W
  • Operating Temperature
    -55°C~150°C TJ
  • Number of Terminations
    6
  • Rds On (Max) @ Id, Vgs
    8.6m Ω @ 12A, 10V
  • Transistor Application
    SWITCHING
  • Reflow Temperature-Max (s)
    30
  • Transistor Element Material
    SILICON
  • Gate Charge (Qg) (Max) @ Vgs
    12nC @ 4.5V
  • Gate to Source Voltage (Vgs)
    20V
  • Continuous Drain Current (ID)
    13A
  • Peak Reflow Temperature (Cel)
    260
  • Pulsed Drain Current-Max (IDM)
    100A
  • Drain to Source Breakdown Voltage
    30V
  • Input Capacitance (Ciss) (Max) @ Vds
    1060pF @ 15V
  • Current - Continuous Drain (Id) @ 25°C
    13A 28A

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • ECCN Code
    EAR99
  • REACH SVHC
    No SVHC
  • RoHS Status
    ROHS3 Compliant
  • JESD-30 Code
    R-PQFP-N6
  • JESD-609 Code
    e3
  • Moisture Sensitivity Level (MSL)
    2 (1 Year)

SHIPPING GUIDE

  • Shipping Methods

    Rest assured that your orders will be handled by these trusted providers, such as DHL, FedEx, SF, and UPS.

  • Shipping Cost

    Shipping starts at $40 but varies for destinations like South Africa, Brazil, India, and more. The actual shipping charges depend on time zone, country, and package weight/volume.

  • Delivery Time

    We ship orders once daily, around 5 p.m., except on Sundays. The estimated delivery time may vary depending on the courier service you choose, but typically ranges from 5 to 7 business days.

  • Professional Platform

  • Full-speed Delivery

  • Wide Variety of Products

  • 365 Days of Quality Assurance