IRFH7911TRPBF
- Manufacturer's Part No.:IRFH7911TRPBF
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:HEXFET®
- Description:MOSFET 2N-CH 30V 13A/28A PQFN
- Datasheet:
- Quantity:RFQAdd to RFQ List
- Payment:
- Delivery:
- Available: 74750
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $2.40214 | US $2.40 |
10+ | US $2.16193 | US $21.62 |
30+ | US $1.68150 | US $50.45 |
100+ | US $1.38123 | US $138.12 |
500+ | US $1.32118 | US $660.59 |
1000+ | US $1.20107 | US $1201.07 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part No.IRFH7911TRPBF
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Arrays
- SeriesHEXFET®
- ECCNEAR99
- MountSurface Mount
- Width5mm
- Height939.8μm
- Length5.9944mm
- FET Type2 N-Channel (Dual)
- Lead FreeLead Free
- PackagingTape & Reel (TR)
- Published2011
- Resistance8.6MOhm
- FET FeatureLogic Level Gate
- Nominal Vgs2.35 V
- Part StatusNot For New Designs
- Power - Max2.4W 3.4W
- SubcategoryFET General Purpose Power
- REACH StatusREACH Unaffected
- Mounting TypeSurface Mount
- Terminal FormNO LEAD
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Number of Pins18
- Operating ModeENHANCEMENT MODE
- Package / Case18-PowerVQFN
- Case ConnectionDRAIN SOURCE
- Terminal FinishMatte Tin (Sn)
- Base Part NumberIRFH7911PBF
- Factory Lead Time39 Weeks
- Power Dissipation2.4W
- Terminal PositionQUAD
- Additional FeatureHIGH RELIABILITY
- Number of Elements2
- Vgs(th) (Max) @ Id2.35V @ 25μA
- Qualification StatusNot Qualified
- Element ConfigurationDual
- Max Power Dissipation3.4W
- Operating Temperature-55°C~150°C TJ
- Number of Terminations6
- Rds On (Max) @ Id, Vgs8.6m Ω @ 12A, 10V
- Transistor ApplicationSWITCHING
- Reflow Temperature-Max (s)30
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs12nC @ 4.5V
- Gate to Source Voltage (Vgs)20V
- Continuous Drain Current (ID)13A
- Peak Reflow Temperature (Cel)260
- Pulsed Drain Current-Max (IDM)100A
- Drain to Source Breakdown Voltage30V
- Input Capacitance (Ciss) (Max) @ Vds1060pF @ 15V
- Current - Continuous Drain (Id) @ 25°C13A 28A
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- JESD-30 CodeR-PQFP-N6
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)2 (1 Year)
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