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IRFI4019HG-117P

  • In Stock: 2368
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Product Parameter

  • Manufacturer
    Infineon Technologies
  • Manufacturer's Part No.
    IRFI4019HG-117P
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Arrays
  • Series
    -
  • Package / Case
    TO-220-5 Full Pack (Formed Leads)
  • Part Status
    Obsolete
  • Operating Temperature
    -55°C~150°C TJ
  • Mount
    Through Hole
  • Number of Pins
    5
  • Packaging
    Tube
  • Subcategory
    FET General Purpose Power
  • Number of Terminations
    5
  • Terminal Position
    SINGLE
  • Number of Elements
    2
  • Radiation Hardening
    No
  • Published
    2009
  • Additional Feature
    HIGH RELIABILITY
  • Case Connection
    ISOLATED
  • Max Power Dissipation
    18W
  • Mounting Type
    Through Hole
  • Transistor Element Material
    SILICON
  • Element Configuration
    Dual
  • Transistor Application
    SWITCHING
  • Power Dissipation
    18W
  • Turn On Delay Time
    7 ns
  • Turn-Off Delay Time
    13 ns
  • Operating Mode
    ENHANCEMENT MODE
  • Pulsed Drain Current-Max (IDM)
    34A
  • Avalanche Energy Rating (Eas)
    77 mJ
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Drain to Source Voltage (Vdss)
    150V
  • Continuous Drain Current (ID)
    8.7A
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    150V
  • FET Type
    2 N-Channel (Dual)
  • Vgs(th) (Max) @ Id
    4.9V @ 50μA
  • Input Capacitance (Ciss) (Max) @ Vds
    810pF @ 25V
  • Gate Charge (Qg) (Max) @ Vgs
    20nC @ 10V
  • FET Feature
    Standard
  • Rise Time
    6.6ns
  • Fall Time (Typ)
    3.1 ns
  • Rds On (Max) @ Id, Vgs
    95m Ω @ 5.2A, 10V

Environmental & Export Classifications

  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • ECCN Code
    EAR99
  • RoHS Status
    RoHS Compliant

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