IRFI4020H-117P
- Manufacturer's Part No.:IRFI4020H-117P
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:-
- Description:MOSFET 2N-CH 200V 9.1A TO-220FP
- Datasheet:
- Quantity:RFQAdd to RFQ List
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- In Stock: 50002
- Available: 24228
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $50.00000 | US $50.00 |
10+ | US $37.50000 | US $375.00 |
30+ | US $32.50000 | US $975.00 |
100+ | US $28.75000 | US $2875.00 |
500+ | US $27.00000 | US $13500.00 |
1000+ | US $25.00000 | US $25000.00 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part No.IRFI4020H-117P
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Arrays
- Series-
- ECCNEAR99
- MountThrough Hole
- Width4.826mm
- Height9.02mm
- Length10.6172mm
- FET Type2 N-Channel (Dual)
- Lead FreeLead Free
- PackagingTube
- Published2006
- Rise Time8ns
- Resistance100MOhm
- FET FeatureStandard
- Nominal Vgs4.9 V
- Part StatusActive
- SubcategoryFET General Purpose Power
- REACH StatusREACH Unaffected
- Mounting TypeThrough Hole
- Recovery Time110 ns
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Number of Pins5
- Operating ModeENHANCEMENT MODE
- Package / CaseTO-220-5 Full Pack
- Case ConnectionDRAIN
- Fall Time (Typ)4 ns
- Factory Lead Time12 Weeks
- Power Dissipation21W
- Terminal PositionSINGLE
- Threshold Voltage4.9V
- Number of Elements2
- Turn On Delay Time8.4 ns
- Vgs(th) (Max) @ Id4.9V @ 100μA
- Radiation HardeningNo
- Turn-Off Delay Time18 ns
- Element ConfigurationDual
- Max Power Dissipation21W
- Operating Temperature-55°C~150°C TJ
- Number of Terminations5
- Rds On (Max) @ Id, Vgs100m Ω @ 5.5A, 10V
- Transistor ApplicationAMPLIFIER
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs29nC @ 10V
- Gate to Source Voltage (Vgs)20V
- Avalanche Energy Rating (Eas)130 mJ
- Continuous Drain Current (ID)9.1A
- Drain to Source Voltage (Vdss)200V
- Pulsed Drain Current-Max (IDM)36A
- Drain to Source Breakdown Voltage200V
- Input Capacitance (Ciss) (Max) @ Vds1240pF @ 25V
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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